IPB017N10N5LF

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IPB017N10N5LF

MOSFETs TRENCH >=100V

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Spezifikationen

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Übersicht

Description

The IPB017N10N5LF is an N-channel MOSFET designed for power management applications, particularly in high-efficiency switching power supplies. It features low on-resistance, high-speed switching capabilities, and can handle high current loads, making it suitable for applications such as DC-DC converters and motor drives.
Key specifications include a maximum drain-source voltage (Vds) of 100V, a continuous drain current (Id) of 17A, and a low gate threshold voltage (Vgs) to enhance efficiency. The device is packaged in a DPAK or TO-220 housing, facilitating effective heat dissipation.
Its low Rds(on) minimizes power losses, contributing to improved thermal performance and overall system efficiency. The IPB017N10N5LF is widely used in automotive, industrial, and consumer electronics due to its reliability and performance under various operating conditions.
This MOSFET is often preferred in designs where space, power efficiency, and thermal management are critical.

Features

The IPB017N10N5LF is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 100V, suitable for various high-voltage applications.
2. Current Capacity: The MOSFET can handle a continuous drain current (I_D) of up to 17A, making it suitable for power management tasks.
3. R_DS(on): Low on-resistance (R_DS(on)) around 10 mΩ, which reduces power losses during operation and enhances efficiency.
4. Gate Threshold Voltage: Features a low gate threshold voltage, allowing for easier driving with standard logic levels.
5. Package Type: Available in a TO-220 package, facilitating good thermal performance and ease of heat sinking.
6. Applications: Commonly used in power supplies, motor control, and other applications requiring efficient switching.
Overall, the IPB017N10N5LF is characterized by its high efficiency, thermal performance, and suitability for demanding electronic circuits.

Package

The IPB017N10N5LF is housed in a TO-220 package type. This package features a metal tab for heat dissipation, making it suitable for high-power applications.

Pinout

The IPB017N10N5LF is a N-channel MOSFET designed for high-efficiency power applications. It features a total of 4 pins. The pin configuration and their functions are as follows:
1. Gate (G) - The input terminal that controls the MOSFET operation. A voltage applied here will turn the device on or off.
2. Drain (D) - The output terminal where the load is connected. Current flows from the drain to the source when the MOSFET is in the on state.
3. Source (S) - The terminal that connects to the ground or the negative side of the power supply. Current flows out of this terminal when the MOSFET is on.
4. Gate (G) - Acts as the same gate terminal, ensuring redundancy due to packaging.
The IPB017N10N5LF is noted for its low on-resistance and fast switching capabilities, making it suitable for applications like DC-DC converters and motor control.

Manufacturer

The IPB017N10N5LF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor company headquartered in Neubiberg, Germany. It specializes in designing and producing a wide range of semiconductor and system solutions, focusing on areas such as automotive, industrial power control, and digital security. Infineon is a leader in power semiconductors, particularly MOSFETs and IGBTs, which are essential for efficient energy management in various applications. The company is known for its innovative products that enhance energy efficiency and sustainability across multiple industries.

Application

The IPB017N10N5LF is an N-channel MOSFET commonly used in various applications such as power management, DC-DC converters, motor drivers, and switching power supplies. Its features make it suitable for high-efficiency designs in industrial equipment, automotive systems, and consumer electronics. The device's ability to handle high currents and low on-resistance enhances performance in power electronics.

Equivalent

The IPB017N10N5LF is an N-channel MOSFET. Equivalent products include the IRF1405, BSC025N10NS3, and STP120NF10. However, always check the specific datasheets for parameters like voltage, current, RDS(on), and package type to ensure compatibility.

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