IPB020N10N5ATMA1

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IPB020N10N5ATMA1

MOSFET N-CH 100V 120A D2PAK

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
Series OptiMOS™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 120A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 2mOhm @ 100A, 10V
Vgs(th)(Max)@Id 3.8V @ 270µA
GateCharge(Qg)(Max)@Vgs 210 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 15600 pF @ 50 V
PowerDissipation(Max) 375W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PG-TO263-3

Übersicht

Description

The IPB020N10N5ATMA1 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It features a low on-resistance (RDS(on)), which ensures efficient operation and minimal power loss during switching. With a voltage rating of 100V and a current rating of 20A, this MOSFET is suitable for various applications, including power management, DC-DC converters, and motor control.
The device is housed in a compact TO-220 package, facilitating ease of heat dissipation and integration into circuits. Its low gate threshold voltage (VGS(th)) allows for easier drive with standard logic levels, enhancing its versatility in different design scenarios.
Key specifications include a maximum continuous drain current of 20A, a maximum pulse current of 80A, and a maximum operating temperature of 175°C. The IPB020N10N5ATMA1 is ideal for high-efficiency and high-frequency applications, making it a popular choice among engineers and designers in the electronics industry.

Features

The IPB020N10N5ATMA1 is an N-channel MOSFET from Infineon Technologies, designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, suitable for various power management tasks.
2. Current Rating: The continuous drain current (I_D) is rated at 20A, facilitating high-load applications.
3. On-Resistance: It offers a low on-resistance (R_DS(on)) of 2.5 mΩ at a gate voltage (V_GS) of 10V, ensuring reduced conduction losses.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for efficient switching.
5. Package Type: It comes in a TO-220 package, providing good thermal performance and ease of heat dissipation.
6. Eco-Friendly: It is RoHS compliant, indicating it is free from hazardous substances.
These features make the IPB020N10N5ATMA1 ideal for applications in power supplies, motor drives, and automotive systems, ensuring high efficiency and reliability.

Package

The IPB020N10N5ATMA1 is packaged in a TO-220 form factor. This package type offers efficient heat dissipation and is commonly used for power MOSFETs in various applications.

Pinout

The IPB020N10N5ATMA1 is an N-channel MOSFET designed for high-efficiency applications. It typically comes in a TO-220 package with three pins.
Pin Configuration:
1. Gate (G): Controls the MOSFET operation; applies voltage to turn on/off the device.
2. Drain (D): The terminal through which the current flows out of the MOSFET when it is on.
3. Source (S): The terminal through which current enters the MOSFET when it is on.
This device is rated for a maximum drain-source voltage (V_DS) of 100V and a maximum continuous drain current (I_D) of 20A. Its low on-resistance (R_DS(on)) allows for efficient power management in various applications, including power supplies and motor drivers.

Manufacturer

The manufacturer of the IPB020N10N5ATMA1 is Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in automotive, industrial power control, and security technologies, producing a wide range of products including power semiconductors, microcontrollers, and sensor solutions. Infineon is known for its innovations in power management and energy efficiency, serving various sectors such as automotive, consumer electronics, and industrial applications.

Application

The IPB020N10N5ATMA1 is an N-channel MOSFET primarily used in power management applications, including DC-DC converters, power supplies, and motor control systems. Its low RDS(on) and high-speed switching characteristics make it suitable for efficient power conversion in consumer electronics, automotive systems, and industrial automation. Additionally, it can be employed in applications requiring high-frequency switching and thermal performance.

Equivalent

The IPB020N10N5ATMA1 is a N-channel MOSFET. Equivalent products include the IRF3205, STP75NF75, and FQP50N06. Always verify specifications such as voltage, current ratings, and RDS(on) for compatibility in your application.

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