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IPB036N12N3GATMA1
MOSFET N-CH 120V 180A TO263-7
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- Fr. Teil #IPB036N12N3GATMA1
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- Datenblatt IPB036N12N3GATMA1 DataSheet
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Spezifikationen
| Series | OptiMOS™ |
| Part Status | Active |
| Base Product Number | IPB036 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 120 V |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 270µA |
| Gate Charge (Qg) (Max) @ Vgs | 211 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 13800 pF @ 60 V |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-7 |
| Package | TO-263-7, D2PAK (6 Leads + Tab) |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Übersicht
Description
This MOSFET is known for its low on-resistance (Rds(on)), which enhances efficiency and reduces heat generation during operation. It is packaged in a TO-220 format, facilitating easy heat dissipation.
Key specifications include a gate-source voltage (Vgs) rating of ±20V and a total gate charge (Qg) that contributes to its fast switching capabilities. The device is optimized for high-speed switching applications, providing reliable performance in demanding environments.
Overall, the IPB036N12N3GATMA1 is ideal for engineers looking for a robust and efficient solution in power electronic designs.
Features
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 120V, making it suitable for various power applications.
2. Current Rating: Capable of handling continuous drain current (ID) up to 36A, providing robust performance for demanding loads.
3. RDS(on): Offers a low on-state resistance (RDS(on)) of approximately 3.6 mΩ at VGS = 10V, which significantly reduces conduction losses and enhances thermal performance.
4. Fast Switching: Designed for fast switching speeds, which improves efficiency in switching power supplies and converters.
5. Package Type: Typically comes in a TO-220 package, facilitating effective heat dissipation and ease of mounting.
6. Temperature Range: Operates within a wide ambient temperature range, enhancing reliability in various environments.
These features make the IPB036N12N3GATMA1 suitable for applications in industrial, automotive, and consumer electronics where efficiency and thermal management are critical.
Package
Pinout
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal that connects to the ground or negative side of the power supply.
The device is suitable for high-efficiency applications due to its low R_DS(on) and fast switching characteristics. It is often used in power converters, motor drives, and other applications requiring reliable high-speed switching.
Manufacturer
Application
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Zahlungen
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