IPB042N10N3 G

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IPB042N10N3 G

MOSFETs N-Ch 100V 100A D2PAK-2 OptiMOS 3

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Spezifikationen

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Standard Pack Qty 1000

Übersicht

Description

The IPB042N10N3 G is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications in power electronics. With a voltage rating of 100V and a current rating of 42A, it is well-suited for use in power management systems, DC-DC converters, and other switching applications. The device features low on-resistance (R_DS(on)), which minimizes power loss during operation and enhances thermal performance.
This MOSFET is part of the Infineon product line and typically includes a TO-220 package for effective heat dissipation, allowing for easier assembly in electronic circuits. The IPB042N10N3 G also offers fast switching capabilities, making it ideal for applications that require high-speed operation.
In summary, the IPB042N10N3 G is a versatile, high-performance MOSFET suitable for various applications in power conversion and management, providing efficiency and reliability for modern electronic systems.

Features

The IPB042N10N3 G is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient switching applications. Key features include:
1. Voltage Rating: 100V, suitable for high-voltage applications.
2. Current Rating: Up to 42A continuous drain current, allowing for significant power handling.
3. R_DS(on): Low on-resistance (around 4.2 mΩ), which reduces conduction losses and improves efficiency.
4. Gate Threshold Voltage: Typically ranges from 1V to 3V, allowing for easy gate drive.
5. Package Type: Available in a TO-220 package, facilitating effective heat dissipation.
6. Fast Switching Speed: Enables efficient operation in high-frequency applications.
7. Applications: Commonly used in power supplies, motor drivers, and converters.
Overall, the IPB042N10N3 G is well-suited for applications requiring high efficiency and reliability in power management.

Package

The IPB042N10N3 G is typically packaged in a TO-220 format. This package type provides efficient thermal performance and is designed for high-power applications.

Pinout

The IPB042N10N3 G is a N-channel MOSFET from Infineon Technologies. It has a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The terminal where the current flows out when the device is on.
3. Source (S) - The terminal through which current enters the MOSFET when it is on.
4. N/C (Not Connected) - Sometimes included for layout purposes; not used in the circuit.
5. N/C (Not Connected) - Similar to the previous, also not connected.
This MOSFET is designed for applications such as power management and switching due to its low on-resistance and high efficiency. It has a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) rating of 42A.

Manufacturer

The IPB042N10N3 G is manufactured by Infineon Technologies AG. Infineon is a leading global semiconductor manufacturer based in Germany, specializing in various sectors such as automotive, industrial power control, and digital security. The company focuses on producing high-performance semiconductor solutions that enhance energy efficiency, connectivity, and security in electronic systems. Infineon's products are widely used in applications ranging from automotive systems and renewable energy to smart devices and telecommunications. As a key player in the semiconductor industry, Infineon aims to drive innovation and support sustainable development through its advanced technologies.

Application

The IPB042N10N3 G is an N-channel MOSFET primarily used in power management applications. It is suitable for switching and amplification tasks in power supplies, motor drives, and DC-DC converters. Its low on-resistance and high-speed switching capabilities make it ideal for applications in renewable energy systems, electric vehicles, and industrial automation. Additionally, it can be used in consumer electronics for power regulation and efficiency enhancements.

Equivalent

The IPB042N10N3 G is an N-channel MOSFET. Equivalent products include:
1. IRF3205
2. BSC026N10NS3
3. FDP047N10
4. STP40NF10
5. AOD510
Always verify specifications like RDS(on), VGS, and maximum current ratings to ensure compatibility for your specific application.

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