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IPB072N15N3 G
MOSFETs N-Ch 150V 100A D2PAK-2 OptiMOS 3
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- Fr. Teil #IPB072N15N3 G
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- Datenblatt IPB072N15N3 G DataSheet
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Spezifikationen
| Packaging | MouseReel |
| Standard Pack Qty | 1000 |
Übersicht
Description
Key specifications include a maximum drain-source voltage (V_DS) of 150V, a continuous drain current (I_D) of 72A, and a low gate charge, which facilitates rapid switching. The device features a TO-220 package, allowing for efficient thermal management and easy mounting on PCBs.
The IPB072N15N3 G is ideal for applications requiring reliable performance under high loads and operates effectively in various environments. Its robustness and efficiency make it a popular choice among engineers for designing modern electronic systems.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 150V, making it suitable for various power applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 72A, with a pulsed drain current capability of up to 280A, allowing it to drive high power loads.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 0.072Ω at a gate voltage of 10V, which ensures low conduction losses.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically between 2V and 4V, enabling efficient switching.
5. Package Type: It is available in a TO-220 package, facilitating heat dissipation and easy mounting.
6. Applications: Ideal for use in power supplies, converters, and motor drivers, where high efficiency and reliability are crucial.
These features make the IPB072N15N3 G suitable for demanding applications in power electronics.
Package
Pinout
1. Gate (G): This pin controls the MOSFET's operation. A voltage applied to the gate turns the device on or off, allowing current to flow from the drain to the source.
2. Drain (D): This is the output pin where the current flows out of the MOSFET when it is in the on state. It connects to the load in various circuit configurations.
3. Source (S): This pin serves as the return path for current that flows through the MOSFET. It is typically connected to ground in low-side switching applications.
The IPB072N15N3 G is known for its low on-resistance and high-speed switching capabilities, making it suitable for applications such as power supplies, motor control, and other high-efficiency switching applications.
Manufacturer
Application
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Versand
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Zahlungen
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