IPB100N10S3-05

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IPB100N10S3-05

MOSFETs N-Ch 100V 100A D2PAK-2 OptiMOS-T

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Spezifikationen

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Standard Pack Qty 1000

Übersicht

Description

The IPB100N10S3-05 is a N-channel MOSFET designed for high-efficiency power applications. It features a maximum drain-source voltage (V_DS) of 100V, making it suitable for various switching and amplification tasks in power management circuits. With a low on-resistance (R_DS(on)) of 10mΩ, it minimizes conduction losses, enhancing overall system efficiency.
The device has a high continuous drain current rating, allowing it to handle significant power loads, making it ideal for use in DC-DC converters, motor drivers, and power switching applications. Its fast switching speed contributes to reduced switching losses, which is critical in high-frequency applications.
The IPB100N10S3-05 is packaged in a TO-220 format, facilitating effective heat dissipation and easy mounting in electronic circuits. Overall, this MOSFET is valued for its reliability and performance in demanding environments, making it a popular choice among engineers for various power electronic designs.

Features

The IPB100N10S3-05 is a high-performance N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 100A, allowing it to efficiently drive heavy loads.
3. Low R_DS(on): With a low on-resistance (R_DS(on)) of approximately 10 mΩ at V_GS of 10V, it ensures minimal power loss during operation.
4. Fast Switching Speed: The MOSFET supports fast switching capabilities, making it ideal for applications requiring high efficiency and speed.
5. Thermal Performance: It has a robust thermal performance, allowing for effective heat dissipation.
6. Package Type: Available in a TO-220 package, facilitating easy mounting and heat management.
These features make the IPB100N10S3-05 suitable for applications in power supplies, motor drives, and DC-DC converters.

Package

The IPB100N10S3-05 is typically packaged in a TO-220 form factor. This package type provides efficient heat dissipation and is commonly used for power applications, allowing for easy mounting and thermal management in electronic circuits.

Pinout

The IPB100N10S3-05 is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin determines whether the device is on or off.

2. Drain (D): This pin is connected to the load. Current flows from the drain to the source when the MOSFET is activated.
3. Source (S): This pin is connected to ground or the lower voltage level of the circuit. It serves as the return path for the current flowing through the MOSFET.
This device is designed for high-efficiency applications, featuring low on-resistance and fast switching capabilities.

Manufacturer

The IPB100N10S3-05 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in the production of a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and automotive electronics. The company focuses on applications in automotive, industrial, and communication sectors, emphasizing energy efficiency and sustainability. Infineon is recognized for its innovation in power management technologies, making it a key player in the semiconductor industry.

Application

The IPB100N10S3-05 is an N-channel MOSFET primarily used in power management applications. Key application areas include DC-DC converters, motor drivers, power supplies, and inverters. It is suitable for high-efficiency switching applications in consumer electronics, automotive systems, and renewable energy systems, where high current and low conduction losses are essential.

Equivalent

The IPB100N10S3-05 is a N-channel MOSFET. Equivalent products include the IRF240, STP100N10, and BSS138. When looking for alternatives, consider specifications like voltage rating, current rating, R_DS(on), and package type to ensure compatibility. Always verify the datasheet for precise characteristics.

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