IPB120N04S4-02

The IPB120N04S4-02 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It features a low on-resistance (R_DS(on)) of 4 mΩ, making it suitable for high-efficiency switching applications, such as in power supplies and motor drives.
This device can handle a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) of 120A at room temperature, with higher capabilities under pulsed conditions. Its fast switching speeds allow for reduced energy losses in high-frequency operations.
The MOSFET is typically housed in a TO-220 package, providing effective thermal management. Its robustness and efficiency make it ideal for applications in renewable energy systems, electric vehicles, and various consumer electronics.
Key specifications include low gate charge (Q_g), which minimizes drive losses, and a wide operating temperature range, making it versatile for various environments. Overall, the IPB120N04S4-02 is a reliable choice for designers seeking efficient power management solutions.

The IPB120N04S4-02 is a N-channel MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 40V.
2. Current Rating: The continuous drain current (Id) is rated at 120A, making it suitable for high power applications.
3. RDS(on): It boasts a low on-resistance (RDS(on)) of approximately 4.5 mΩ, contributing to improved efficiency and reduced heat generation.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) ranges from 2V to 4V, allowing for easy drive from low-voltage logic levels.
5. Fast Switching: Designed for fast switching capabilities, enhancing performance in applications like DC-DC converters and motor drives.
6. Package: Available in TO-220 packaging, which aids in heat dissipation.
Overall, the IPB120N04S4-02 is ideal for power management in various electronic devices, offering high reliability and performance in compact designs.

The IPB120N04S4-02 is packaged in a DPAK (TO-252) format. This package type is designed for surface-mount applications and provides efficient thermal performance and electrical characteristics suitable for high-power MOSFET applications.

The IPB120N04S4-02 is an N-channel MOSFET designed for power management applications. It features a total of 5 pins. The pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET by applying a voltage to turn it on or off.
2. Drain (D): The main output pin where the load is connected, allowing current to flow through the device when it is on.
3. Source (S): Connected to the ground or negative side of the power supply, completing the circuit when the MOSFET is in the on state.
4. Drain (D): The device typically has a second D pin, depending on the package, serving the same function as the first Drain pin; this enhances current handling capabilities.
5. Source (S): Similarly, a second S pin may be present for improved thermal performance and current distribution.
The IPB120N04S4-02 is known for its low on-state resistance and fast switching capabilities, making it suitable for various applications in power electronics.

The IPB120N04S4-02 is manufactured by Infineon Technologies, a leading global semiconductor manufacturer. Infineon is headquartered in Neubiberg, Germany, and specializes in providing semiconductor solutions for automotive, industrial, and consumer applications. The company focuses on power management, automotive safety, and IoT, among other areas, and is known for its innovations in power semiconductors, microcontrollers, and sensor technologies. Infineon’s products are integral in enhancing energy efficiency and enabling smart technologies across various industries.

The IPB120N04S4-02 is a power MOSFET commonly used in various applications, including power management, DC-DC converters, motor drives, and power supplies. It is ideal for high-efficiency switching applications due to its low on-resistance and fast switching capabilities. Its applications extend to electric vehicles, renewable energy systems, and industrial automation, where efficient power conversion and control are essential.

The IPB120N04S4-02 is an N-channel MOSFET, and equivalent products include the IRF120N04, STP120N04, and BSC120N04. Ensure to check specifications such as voltage, current ratings, and R_DS(on) for compatibility. Always verify with the datasheet for precise requirements.