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IPB160N04S2-03
MOSFETs N-Ch 40V 160A D2PAK-6 OptiMOS
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- Fr. Teil #IPB160N04S2-03
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- Datenblatt IPB160N04S2-03 DataSheet
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Spezifikationen
| Packaging | MouseReel |
| Standard Pack Qty | 1000 |
Übersicht
Description
This MOSFET features a fast switching speed, ensuring minimal energy loss during operation, which is critical for high-frequency applications. The package typically used is a TO-220 or DPAK format, allowing for effective heat dissipation. Designed for robust performance, it is often utilized in consumer electronics, industrial equipment, and automotive applications. Overall, the IPB160N04S2-03 combines high current handling, low losses, and reliability, making it a popular choice in modern electronic designs.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, making it suitable for various power management applications.
2. Continuous Drain Current: It can handle a continuous drain current (I_D) of up to 160A, allowing it to support high-power applications.
3. Low On-Resistance: The on-resistance (R_DS(on)) is typically around 2.5 mΩ at V_GS = 10V, which helps minimize power losses during operation.
4. Fast Switching Speed: This MOSFET offers fast switching capabilities, making it ideal for high-frequency applications.
5. Thermal Performance: It features a robust thermal performance with a low thermal resistance, ensuring reliable operation at elevated temperatures.
6. Package Type: It is typically available in a TO-220 or similar package, facilitating good heat dissipation.
Overall, the IPB160N04S2-03 is well-suited for applications such as DC-DC converters, motor drives, and power inverters.
Package
Pinout
1. Gate (G) - This pin controls the operation of the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D) - This pin is where the load is connected. Current flows from the Drain to the Source when the MOSFET is on.
3. Source (S) - This pin is connected to the ground or the negative side of the power supply in typical applications. It serves as the reference point for the gate voltage.
The device is designed for high-efficiency applications, with low on-resistance and fast switching capabilities, making it suitable for power management and various switching applications.
Manufacturer
Application
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