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IPB180N04S4-01
MOSFETs N-Ch 40V 180A D2PAK-6 OptiMOS-T2
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- Fr. Teil #IPB180N04S4-01
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- Datenblatt IPB180N04S4-01 DataSheet
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Spezifikationen
| Packaging | MouseReel |
| Standard Pack Qty | 1000 |
Übersicht
Description
The device is housed in a DPAK package, allowing for effective thermal management and easy mounting on PCBs. Its fast switching capabilities enhance performance in applications like motor drives, power supplies, and DC-DC converters. The IPB180N04S4-01 also features a gate threshold voltage (V_GS(th)) that allows for compatibility with lower drive voltages.
Overall, this MOSFET provides a balance of efficiency and robustness, making it a popular choice for engineers looking to optimize power systems.
Features
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 40V, suitable for various power applications.
2. Current Rating: It can handle a continuous drain current (Id) of up to 180A, enabling it to manage significant loads efficiently.
3. RDS(on): The on-resistance is low (typically around 4.5 mΩ), which reduces power losses during operation, enhancing efficiency.
4. Fast Switching: Optimized for fast switching speeds, making it ideal for applications in DC-DC converters and motor drives.
5. Thermal Performance: It features a robust thermal design, supporting high-temperature operations and ensuring reliability under demanding conditions.
6. Package Type: Typically available in a TO-220 package, facilitating effective heat dissipation.
Overall, the IPB180N04S4-01 is well-suited for applications requiring high current handling, low power loss, and efficient switching.
Package
Pinout
1. Gate (G): Controls the MOSFET's switching operation.
2. Drain (D): The terminal through which the current flows to the load.
3. Source (S): The terminal that connects to the ground or the lower potential in the circuit.
4. Drain to Source Body Diode: Internal diode that provides a path for current when the MOSFET is off, useful in certain applications.
5. Thermal Pad: Not a pin but a feature for heat dissipation, enhancing performance under load.
This MOSFET is characterized by a low R_DS(on) and high current carrying capacity, making it suitable for applications like power supplies, DC-DC converters, and motor control.
Manufacturer
Application
Equivalent
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Zahlungen
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