IPB60R099CPATMA1

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IPB60R099CPATMA1

MOSFET N-CH 600V 31A TO263-3

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
Series CoolMOS™
ProductStatus Not For New Designs
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 31A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 99mOhm @ 18A, 10V
Vgs(th)(Max)@Id 3.5V @ 1.2mA
GateCharge(Qg)(Max)@Vgs 80 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 2800 pF @ 100 V
PowerDissipation(Max) 255W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PG-TO263-3-2

Übersicht

Description

The IPB60R099CPATMA1 is a part of the Infineon CoolMOS series, specifically designed for power applications. This device is a high-voltage MOSFET, optimized for efficient power conversion with a low on-resistance (RDS(on)) of 0.099 ohms, making it suitable for applications such as switch-mode power supplies (SMPS), DC-DC converters, and other energy-efficient circuits.
It operates at a maximum voltage of 600V, allowing it to handle demanding high-voltage applications. The device features a robust construction that provides excellent thermal performance and reliability. Its fast switching capabilities reduce losses during operation, enhancing overall efficiency.
Additionally, the IPB60R099CPATMA1 is packaged in a TO-220 housing, facilitating easy mounting and heat dissipation in power electronic designs. Overall, this MOSFET is ideal for engineers looking to improve the performance and efficiency of their power management systems.

Features

The IPB60R099CPATMA1 is a N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 60A, allowing it to manage substantial loads.
3. R_DS(on): It boasts a low on-resistance of 0.099 ohms, which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically around 2-4V, facilitating easy drive with lower gate voltages.
5. Package: It comes in a TO-220 package, providing good thermal performance for heat dissipation.
6. Fast Switching: The MOSFET exhibits fast switching speeds, making it ideal for use in applications like switch-mode power supplies and DC-DC converters.
Overall, the IPB60R099CPATMA1 is designed for efficiency and reliability in demanding power electronic applications.

Package

The IPB60R099CPATMA1 is packaged in a TO-247 package type. This package is designed for high-power applications, providing efficient thermal management and robustness in performance.

Pinout

The IPB60R099CPATMA1 is an N-channel MOSFET manufactured by Infineon Technologies. It has a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin allows current to flow from the drain to the source.
2. Drain (D): This is the terminal through which the current exits the MOSFET when it is in the 'on' state.
3. Source (S): This is the terminal through which the current enters the MOSFET.
The IPB60R099CPATMA1 is designed for high-efficiency applications, with a maximum drain-source voltage of 60V and a continuous drain current rating of 99A. It is commonly used in power management, automotive applications, and other electronic circuits requiring efficient switching.

Manufacturer

The IPB60R099CPATMA1 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor company based in Germany, specializing in the design and production of a wide range of semiconductor solutions. Their products serve various industries, including automotive, industrial power control, and communication technologies. Infineon is known for its innovations in power semiconductors, microcontrollers, and sensors, focusing on energy efficiency and reliability in electronic applications.

Application

The IPB60R099CPATMA1 is a N-channel power MOSFET typically used in applications such as DC-DC converters, motor control, and power management systems. Its low ON resistance and high switching efficiency make it suitable for use in power supplies, electric vehicles, and renewable energy systems. Additionally, it can be utilized in industrial automation and lighting applications.

Equivalent

The IPB60R099CPATMA1 is a MOSFET from Infineon. Equivalent products include:
1. STP60NF06 - STMicroelectronics
2. IRF540 - Infineon/International Rectifier
3. FQP60N06 - ON Semiconductor
4. BSS123 - Nexperia (for lower power applications)
Always verify specifications such as V_DS, I_D, R_DS(on), and package before substituting.

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