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IPB60R160P6
MOSFETs HIGH POWER_LEGACY
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- Fr. Teil #IPB60R160P6
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- Datenblatt IPB60R160P6 DataSheet
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Spezifikationen
| Packaging | Reel |
Übersicht
Description
Key specifications include a low on-resistance (RDS(on)), typically around 0.16 ohms, which enhances efficiency by minimizing power loss during operation. The device also exhibits fast switching capabilities, allowing for improved performance in fast-switching scenarios.
Packaging typically comes in a TO-247 format, providing good thermal performance due to its larger surface area. The IPB60R160P6 is designed for high reliability and thermal stability under various operating conditions, making it an ideal choice for robust power management systems.
In summary, the IPB60R160P6 combines high voltage capability, substantial current handling, and low on-resistance, catering to demanding electronic applications.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) can reach up to 160A, allowing it to handle significant power loads.
3. Low R_DS(on): With a low on-resistance (R_DS(on)) typically around 0.16 ohms, it provides high efficiency by minimizing conduction losses.
4. Fast Switching: Designed for rapid switching applications, it enhances performance in high-frequency circuits.
5. Thermal Management: It has a high maximum junction temperature (T_j) of 175°C, ensuring reliable operation under thermal stress.
Overall, the IPB60R160P6 offers excellent performance for demanding power electronics applications while maintaining energy efficiency.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET's switching. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the output pin where the current flows out of the MOSFET when it is turned on.
3. Source (S): This is the input pin where current enters the MOSFET. It is typically connected to the ground or the lower potential in the circuit.
The IPB60R160P6 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 160A. It is commonly used in power management and conversion applications.
Manufacturer
Application
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