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IPB65R310CFD
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- Fr. Teil #IPB65R310CFD
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- Datenblatt IPB65R310CFD DataSheet
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Spezifikationen
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Factory Pack Quantity:Factory Pack Quantity | 1000 |
| Technology | Si |
| REACH - SVHC | Details |
| Mounting Style | SMD/SMT |
| Package / Case | D2PAK-3 (TO-263-3) |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Id - Continuous Drain Current | 11.4 A |
| Rds On - Drain-Source Resistance | 280 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 3.5 V |
| Qg - Gate Charge | 41 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 104.2 W |
| Channel Mode | Enhancement |
| Tradename | CoolMOS |
| Configuration | Single |
| Fall Time | 7 ns |
| Height | 4.4 mm |
| Length | 10 mm |
| Rise Time | 7.5 ns |
| Series | CoolMOS CFD2 |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 45 ns |
| Typical Turn-On Delay Time | 11 ns |
| Width | 9.25 mm |
| Part # Aliases | IPB65R310CFDATMA1 SP000745032 IPB65R310CFDATMA1 |
| Unit Weight | 0.139332 oz |
Übersicht
Description
The device is packaged in a compact TO-220 form factor, facilitating easy heat dissipation and integration into circuits. Its fast switching capabilities contribute to improved efficiency in high-frequency applications. Additionally, the IPB65R310CFD includes a built-in gate protection mechanism, enhancing its reliability in demanding environments.
Engineered for robustness, this MOSFET is ideal for both industrial and consumer electronics, where efficiency and reliability are crucial. Overall, the IPB65R310CFD is a versatile component for designs requiring efficient power management and thermal performance.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, enabling it to handle high voltage applications.
2. On-Resistance: The on-resistance (R_DS(on)) is low at 0.310 ohms, which enhances efficiency and reduces power losses during operation.
3. Current Rating: It can handle continuous drain current (I_D) up to 38A, making it suitable for demanding applications.
4. Fast Switching: The device offers fast switching capabilities, which contribute to improved performance in high-frequency operations.
5. Thermal Management: It features a TO-220 package, allowing for effective heat dissipation and thermal management.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is specified between 2-4V, allowing for compatibility with various control signals.
These features make the IPB65R310CFD ideal for applications in automotive, industrial, and renewable energy systems.
Package
Pinout
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The terminal through which the load current flows.
3. Source (S) - The terminal connected to the ground or negative side of the circuit.
The device is known for its low on-resistance and high-speed switching capabilities, making it suitable for use in power supplies, motor drivers, and other high-efficiency power applications. It supports high voltage and current ratings, enabling its use in various demanding environments.
Manufacturer
Application
Equivalent
Versand
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Versandgebührenreferenz (DHL/FedEx):
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von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
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3. Überweisung
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