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IPB80N06S2-08
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- Fr. Teil #IPB80N06S2-08
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- Datenblatt IPB80N06S2-08 DataSheet
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Spezifikationen
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Factory Pack Quantity:Factory Pack Quantity | 1000 |
| Technology | Si |
| Shipping Restrictions | Mouser does not presently sell this product in your region. |
| Mounting Style | SMD/SMT |
| Package / Case | D2PAK-3 (TO-263-3) |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 55 V |
| Id - Continuous Drain Current | 80 A |
| Rds On - Drain-Source Resistance | 7.7 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 215 W |
| Channel Mode | Enhancement |
| Configuration | Single |
| Fall Time | 14 ns |
| Height | 4.4 mm |
| Length | 10 mm |
| Rise Time | 15 ns |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 32 ns |
| Typical Turn-On Delay Time | 14 ns |
| Width | 9.25 mm |
| Part # Aliases | SP000218830 IPB80N06S208ATMA1 |
| Unit Weight | 0.139332 oz |
Übersicht
Description
The device is housed in a TO-220 package, facilitating effective heat dissipation, making it ideal for high-power applications. Its fast switching capabilities contribute to improved system efficiency. Additionally, the IPB80N06S2-08 is characterized by a gate threshold voltage (V_GS(th)) that allows for easier drive circuit design, making integration into existing circuits straightforward.
Overall, the IPB80N06S2-08 offers a reliable solution for engineers looking for efficient power handling in modern electronic systems.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V.
2. Continuous Drain Current: It can handle a continuous current of up to 80A, making it suitable for demanding applications.
3. Low On-Resistance: The on-resistance (R_DS(on)) is low, typically around 0.0082 ohms, which minimizes power loss and heat generation during operation.
4. Fast Switching: The device supports high-speed switching, ideal for applications such as DC-DC converters and motor drivers.
5. Thermal Performance: With a package that supports efficient heat dissipation, it maintains performance under various thermal conditions.
6. Gate Threshold Voltage: Its threshold voltage (V_GS(th)) is designed for compatibility with standard gate drive circuits.
Overall, the IPB80N06S2-08 is suitable for applications requiring high power efficiency and reliability, such as automotive, industrial, and consumer electronics.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here allows the MOSFET to conduct.
2. Drain (D): This is the output pin where the load is connected. The current flows from the Drain to the Source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or negative side of the supply. It serves as the reference for the Gate voltage.
This MOSFET is designed for high-speed switching applications and has a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 80A.
Manufacturer
Application
Equivalent
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Zahlungen
Payment Methods
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