IPC100N04S51R9ATMA1

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IPC100N04S51R9ATMA1

MOSFET N-CH 40V 100A 8TDSON-34

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101, OptiMOS™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 100A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 7V, 10V
RdsOn(Max)@IdVgs 1.9mOhm @ 50A, 10V
Vgs(th)(Max)@Id 3.4V @ 50µA
GateCharge(Qg)(Max)@Vgs 65 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 3770 pF @ 25 V
PowerDissipation(Max) 100W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PG-TDSON-8-34

Übersicht

Description

The IPC100N04S51R9ATMA1 is a high-performance N-channel MOSFET designed for power management applications in various electronic devices. It features low on-resistance (RDS(on)) and fast switching capabilities, making it suitable for high-efficiency power conversion circuits, including DC-DC converters, motor drives, and power supplies.
This MOSFET operates with a maximum drain-source voltage (VDS) of 100V and can handle drain current (ID) up to 51A, which allows it to manage significant loads effectively. Its thermal characteristics ensure reliable performance, with an integrated package that aids in heat dissipation.
The IPC100N04S51R9ATMA1 is commonly used in automotive, industrial, and consumer electronics applications, where robust performance and efficiency are critical. Its compact design and reliable specifications make it a popular choice among engineers for modern electronic circuit designs.
Overall, this device combines efficiency, reliability, and versatility, positioning it as a key component in various power-related applications.

Features

The IPC100N04S51R9ATMA1 is a high-performance N-channel MOSFET designed for efficient power management. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, suitable for various applications.
2. Current Rating: Supports continuous drain current (I_D) of up to 100A, making it ideal for high-current applications.
3. On-Resistance: Exhibits low on-resistance (R_DS(on)), typically around 4.5 mΩ at V_GS = 10V, which enhances efficiency and reduces heat generation.
4. Fast Switching: The device features a rapid switching capability that benefits applications in power supplies and converters.
5. Package Type: Housed in a TO-220 package, facilitating efficient heat dissipation and easy mounting on PCBs.
6. Thermal Performance: Designed for high thermal conductivity, ensuring reliable performance under demanding conditions.
This MOSFET is commonly utilized in automotive, industrial, and consumer electronics applications, where efficient power control is critical.

Package

The IPC100N04S51R9ATMA1 is packaged in a DPAK (TO-252) type package. This package is designed for surface mounting and is commonly used in power applications due to its compact size and efficient thermal performance.

Pinout

The IPC100N04S51R9ATMA1 is a N-channel MOSFET designed for power switching applications. It is housed in a TO-220 package, which typically features three pins.
Pin count and functions:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin allows current to flow between the drain and source.
2. Drain (D): This pin is the output where current enters the device when it is turned on.
3. Source (S): This pin serves as the return path for current leaving the device.
In summary, the IPC100N04S51R9ATMA1 has a total of three pins that facilitate its operation in electronic circuits, primarily for high-efficiency switching applications.

Manufacturer

The IPC100N04S51R9ATMA1 is manufactured by Infineon Technologies AG. Infineon is a German semiconductor manufacturer known for producing a wide range of semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. The company specializes in power semiconductors, microcontrollers, and sensors, focusing on enhancing energy efficiency and enabling innovative technologies. Infineon's products are utilized in applications such as electric vehicles, renewable energy, and smart devices, making it a key player in the semiconductor industry.

Application

The IPC100N04S51R9ATMA1 is a high-performance N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, power supplies, electric vehicles, industrial automation, and motor control. It is suitable for applications requiring high efficiency, fast switching, and low on-resistance, making it ideal for both consumer electronics and renewable energy systems.

Equivalent

The IPC100N04S51R9ATMA1 is a N-channel MOSFET. Equivalent products include the IRF1010, STP100N04, and FQP100N04. Always check specific parameters like voltage, current ratings, and RDS(on) to ensure compatibility in your application.

Versand

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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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