IPD60R180P7ATMA1

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IPD60R180P7ATMA1

MOSFET N-CH 650V 18A TO252-3

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
Series CoolMOS™ P7
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 650 V
Current-ContinuousDrain(Id)@25°C 18A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 180mOhm @ 5.6A, 10V
Vgs(th)(Max)@Id 4V @ 280µA
GateCharge(Qg)(Max)@Vgs 25 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1081 pF @ 400 V
PowerDissipation(Max) 72W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PG-TO252-3

Übersicht

Description

The IPD60R180P7ATMA1 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power management applications. It has a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating of 180A, making it suitable for high-voltage and high-current applications. The device features low on-resistance (R_DS(on)), which minimizes power losses and improves efficiency in power conversion circuits.
This MOSFET is part of the Infineon P7 series, known for its robust performance and thermal stability, ideal for use in applications such as motor drives, power supplies, and renewable energy systems. It comes in a TO-247 package, facilitating easy heat dissipation and assembly. The IPD60R180P7ATMA1 is well-regarded for its reliability and performance in demanding environments, making it a popular choice among engineers and designers in the power electronics field.

Features

The IPD60R180P7ATMA1 is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a high breakdown voltage of 600V, making it suitable for use in high-voltage circuits.
2. Current Rating: It can handle a continuous drain current of up to 60A, providing robust performance in demanding applications.
3. RDS(on): The on-resistance is low, typically around 180mΩ, which reduces power losses during operation and improves efficiency.
4. Packaging: It comes in a TO-220 package, facilitating easy heat dissipation and thermal management.
5. Gate Threshold Voltage: The gate threshold voltage range is 2V to 4V, allowing for flexibility in gate drive designs.
6. Applications: Ideal for power supplies, motor controls, and other high-efficiency switching applications.
These attributes make the IPD60R180P7ATMA1 a reliable choice for designers seeking efficiency and performance in power electronics.

Package

The IPD60R180P7ATMA1 is packaged in a TO-247 package type. This package is designed for high-power applications, providing efficient heat dissipation and robust performance.

Pinout

The IPD60R180P7ATMA1 is an N-channel MOSFET with a pin count of 3. Its primary functions include switching and amplification in power management applications. The pins are typically designated as follows:
1. Gate (G) - Controls the MOSFET's operation, enabling or disabling the flow of current between the drain and source.
2. Drain (D) - The terminal through which the current flows out; it connects to the load.
3. Source (S) - The terminal through which the current enters; it typically connects to ground or the negative side of the power supply.
This component is designed for applications requiring high efficiency and low on-resistance, making it suitable for power supply designs, motor control, and various other electronic circuits.

Manufacturer

The manufacturer of the IPD60R180P7ATMA1 is Infineon Technologies AG. Infineon is a global semiconductor company headquartered in Neubiberg, Germany. It specializes in developing and manufacturing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and security solutions. Infineon's products are used in various applications such as automotive, industrial, and consumer electronics, focusing on efficiency and performance to support advancements in energy management and connectivity. The company is known for its innovative technologies that contribute to sustainable energy and smart mobility solutions.

Application

The IPD60R180P7ATMA1 is an N-channel MOSFET designed for high-efficiency power applications. Its primary application areas include industrial power supplies, motor drivers, DC-DC converters, and renewable energy systems. It is suitable for high-frequency switching and can be used in automotive and consumer electronics for efficient power management.

Equivalent

The IPD60R180P7ATMA1 is a N-channel MOSFET used in power applications. Equivalent products include:
1. IRF180
2. STP60NF180
3. FQD60N180
4. PSMN2R180-30
5. FDS6600
Always check the specific datasheets for detailed specifications and ensure compatibility with your application.

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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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