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IPD70R600P7S
MOSFETs CONSUMER
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- Fr. Teil #IPD70R600P7S
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- Datenblatt IPD70R600P7S DataSheet
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Spezifikationen
| Packaging | Reel |
Übersicht
Description
The device is part of the Infineon P7 series, known for its enhanced thermal performance and robustness. Its package typically includes a TO-247 or similar configuration, allowing for efficient heat dissipation. The MOSFET's fast switching capabilities contribute to reduced power losses in circuits, making it ideal for designs requiring high efficiency.
Key specifications include a maximum gate-source voltage of ±20V and a significant safe operating area (SOA) for reliable operation under different load conditions. Overall, the IPD70R600P7S is favored in modern electronic designs for its balance of performance, efficiency, and reliability.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) up to 70A, which allows it to manage substantial load currents.
3. R_DS(on): The on-resistance is low (typically around 0.15 ohms), minimizing conduction losses and improving efficiency.
4. Gate Threshold Voltage: It has a gate threshold voltage (V_GS(th)) range of 2-4V, facilitating easy interfacing with logic-level control circuits.
5. Packaging: Available in a TO-247 package, which provides good thermal performance and is suitable for high-power applications.
6. Fast Switching: The device supports fast switching speeds, making it ideal for use in applications like inverters and converters.
7. Thermal Management: It features a good thermal conductivity, enhancing its reliability in demanding environments.
These attributes make the IPD70R600P7S a versatile choice for power management in various electronic systems.
Package
Pinout
1. Gate (G) - Controls the MOSFET operation by applying a voltage to turn it on or off.
2. Drain (D) - The terminal through which the current flows out of the MOSFET when it is in the on state.
3. Source (S) - The terminal through which current enters the MOSFET when it is conducting.
The device is designed for high-performance applications, primarily in power conversion, such as inverters and DC-DC converters, featuring a high voltage rating of 600V and a continuous drain current of up to 70A. Its enhanced efficiency and thermal performance make it suitable for demanding power management tasks.
Manufacturer
Application
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