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IPG20N04S4-12
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- Fr. Teil #IPG20N04S4-12
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- Datenblatt IPG20N04S4-12 DataSheet
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Spezifikationen
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Factory Pack Quantity:Factory Pack Quantity | 5000 |
| Technology | Si |
| REACH - SVHC | Details |
| Mounting Style | SMD/SMT |
| Package / Case | TDSON-8 |
| Transistor Polarity | N-Channel |
| Number of Channels | 2 Channel |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Id - Continuous Drain Current | 20 A |
| Rds On - Drain-Source Resistance | 12.2 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 18 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 41 W |
| Channel Mode | Enhancement |
| Tradename | OptiMOS |
| Configuration | Dual |
| Height | 1.27 mm |
| Length | 5.9 mm |
| Series | OptiMOS-T2 |
| Transistor Type | 2 N-Channel |
| Width | 5.15 mm |
| Part # Aliases | IPG2N4S412XT SP000705560 IPG20N04S412ATMA1 |
| Unit Weight | 0.003474 oz |
| Qualification | AEC-Q100 |
Übersicht
Description
Its fast switching capabilities enable high-frequency operation, providing efficiency in applications such as converters and inverters. The device is housed in a TO-220 package, facilitating easy heat dissipation and integration into various circuit designs. Its robust construction ensures reliability and longevity in critical applications. Overall, the IPG20N04S4-12 represents a versatile solution for engineers seeking efficient power management in their designs.
Features
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 400V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain currents up to 20A, providing robust performance in power circuits.
3. RDS(on): The on-resistance is low, typically around 0.13 ohms, which minimizes power loss and improves efficiency during operation.
4. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) ranges from 2V to 4V, allowing for easy interfacing with logic-level control signals.
5. Package: Available in a TO-220 package, facilitating effective heat dissipation.
6. Switching Speed: It offers fast switching capabilities, making it suitable for applications in DC-DC converters and motor drives.
7. Thermal Management: Designed to handle heat well, with a maximum junction temperature of 150°C.
These features make the IPG20N04S4-12 ideal for applications in industrial, automotive, and consumer electronics sectors requiring efficient power management.
Package
Pinout
Pin Count and Functions:
1. Gate (G) - This pin is used to control the MOSFET's switching operation. Applying a voltage here turns the MOSFET on.
2. Drain (D) - This is the output pin where the load is connected. The current flows from the drain to the source when the MOSFET is on.
3. Source (S) - This pin is connected to the ground or negative side of the power supply. It serves as the return path for the current.
This device is commonly used in power management applications due to its efficiency and high-performance characteristics.
Manufacturer
Application
Equivalent
Versand
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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
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2. Kredit- / Debitkarte
3. Überweisung
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