IPP034NE7N3G

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IPP034NE7N3G

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Spezifikationen

Manufacturer Infineon Technologies
Package TO-220-3
Operating Temperature -55℃~+175℃
RDS(on) 3.4mΩ@10V,100A
Drain to Source Voltage 75V
Pd - Power Dissipation 214W
Current - Continuous Drain(Id) 100A
Reverse Transfer Capacitance (Crss@Vds) 66pF
Input Capacitance(Ciss@Vds) 8.13nF
Gate Threshold Voltage (Vgs(th)@Id) 3.8V
Gate Charge(Qg) 117nC@10V
Number 1 N-channel

Übersicht

Description

IPP034NE7N3G appears to be a reference to a specific component or product, possibly within the field of electronics or semiconductor technology. However, without additional context, such as the industry or application, it's challenging to provide a precise introduction.
If it pertains to a specific part number, it might relate to a type of integrated circuit (IC), transistor, or other electronic components, typically used in various applications like power management, signal processing, or microcontroller interfacing.
To gather relevant details, it's advisable to consult technical datasheets or manufacturer specifications, which would provide information on the component's features, specifications, and applications. If you have a specific context in mind, please provide more details for a targeted introduction.

Features

The IPP034NE7N3G is an N-channel MOSFET designed for various power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Handling: The device can handle continuous drain current (I_D) of up to 34A, offering robust performance for driving loads.
3. On-Resistance: It boasts a low on-resistance (R_DS(on)) typically around 10 mΩ at a gate-source voltage (V_GS) of 10V, enhancing efficiency by minimizing power loss.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 3V, allowing for easy driving with low-voltage signals.
5. Package Type: It comes in a TO-220 package, providing good thermal performance and ease of mounting in various circuits.
6. Applications: Ideal for use in DC-DC converters, motor drives, and other switching applications.
These features make the IPP034NE7N3G a versatile component for modern electronic designs requiring efficient power management.

Package

The IPP034NE7N3G is packaged in a TO-220 format, which is a popular type of package for power transistors. It features a metal tab for heat dissipation and is designed for efficient thermal management in electronic applications.

Pinout

The IPP034NE7N3G is an N-channel MOSFET designed primarily for power applications. It features a total of 5 pins, which are typically configured as follows:
1. Gate (G) - The control terminal used to turn the MOSFET on and off.
2. Drain (D) - The terminal through which the load current flows when the device is turned on.
3. Source (S) - The terminal that is connected to ground or a lower potential; it is the outgoing current path when the MOSFET is conducting.
The device is noted for its low on-resistance and high-speed switching capabilities, making it suitable for various applications including power management and motor control. Always refer to the manufacturer's datasheet for detailed specifications and electrical characteristics.

Manufacturer

The IPP034NE7N3G is manufactured by Infineon Technologies AG, a global semiconductor manufacturer based in Germany. Infineon specializes in producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and security ICs. The company serves various industries such as automotive, industrial, and consumer electronics. Infineon is known for its innovations in power management and energy efficiency, making it a key player in the semiconductor sector.

Application

The IPP034NE7N3G is a high-current N-channel MOSFET designed for applications in power management, including DC-DC converters, motor drivers, and power supplies. It is suitable for both industrial and consumer electronics, particularly in automotive, renewable energy systems, and battery management applications, where efficient switching and thermal performance are essential.

Equivalent

The IPP034NE7N3G chip is a N-channel MOSFET typically used in power applications. Equivalent products include the IRF3205, STP55NF06, and BSS140. Check specifications like voltage ratings, current handling, and RDS(on) values to ensure compatibility for your specific application.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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