IPP65R280E6

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IPP65R280E6

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Spezifikationen

Technology Si
Packaging Tube
Brand Infineon Technologies
Product Type MOSFETs
Series CoolMOS E6
Factory Pack Quantity:Factory Pack Quantity 500
Subcategory Transistors
Part # Aliases IPP65R28E6XK SP000795268 IPP65R280E6XKSA1
Shipping Restrictions Mouser does not presently sell this product in your region.
Mounting Style Through Hole
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Height 15.65 mm
Length 10 mm
Width 4.4 mm
Unit Weight 0.068784 oz
Package / Case TO-220-3
Configuration Single
Tradename CoolMOS
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 13.8 A
Rds On - Drain-Source Resistance 250 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Pd - Power Dissipation 104 W
Transistor Type 1 N-Channel

Übersicht

Description

The IPP65R280E6 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It features a 650V voltage rating and a maximum continuous drain current of 280A, making it suitable for high-voltage and high-current applications such as power converters, motor drives, and industrial power supplies.
This device is notable for its low on-resistance (RDS(on)) and fast switching capabilities, which enhance efficiency and reduce heat generation during operation. Its TO-247 package allows for effective heat dissipation, contributing to improved reliability in demanding environments.
The IPP65R280E6 is part of Infineon's E6 series, which is optimized for higher performance in terms of switching losses and thermal management. It’s commonly used in applications like solar inverters, UPS systems, and electric vehicle drives, where efficient power management is critical. The device's robustness and efficiency make it a popular choice among engineers for modern power electronics designs.

Features

The IPP65R280E6 is a N-channel power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a breakdown voltage of 650V, making it suitable for high-voltage applications.
2. RDS(on): Offers a low on-resistance of 0.280 Ohms, which enhances conduction efficiency and reduces power loss.
3. Current Rating: Supports continuous drain current of up to 8A, ideal for various power management applications.
4. Gate Charge: Features a relatively low total gate charge (Qg), facilitating faster switching speeds.
5. Package: Available in a TO-220 package, ensuring good thermal performance and easy mounting.
6. Temperature Range: Operates in a wide temperature range, with a maximum junction temperature of 175°C.
7. Applications: Suitable for use in power supplies, motor drives, and other high-frequency switching applications.
Overall, the IPP65R280E6 is designed for efficiency and performance in demanding power electronics applications.

Package

The IPP65R280E6 is packaged in a TO-247 format. This package type is designed for high-power applications, providing good thermal performance and electrical insulation.

Pinout

The IPP65R280E6 is an N-channel MOSFET from Infineon Technologies, primarily used for efficient power switching in various applications. It features a TO-220 package with a pin count of three.
The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage here allows current to flow between the Drain and Source pins.

2. Drain (D): This pin is the output where current flows out when the MOSFET is turned on. It connects to the load.
3. Source (S): This pin is the input where current flows into the MOSFET. It is typically connected to ground or a reference voltage in switching applications.
The IPP65R280E6 is known for its low on-resistance and high-speed switching capabilities, making it ideal for applications in power supplies, motor drives, and other high-efficiency circuits.

Manufacturer

The IPP65R280E6 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in semiconductor solutions, particularly in power management, automotive, industrial, and security applications. The company is known for its innovations in power semiconductors, including MOSFETs, IGBTs, and integrated circuits, catering to various sectors such as automotive, consumer electronics, and renewable energy. Infineon is recognized for its commitment to sustainability and energy efficiency, playing a significant role in the development of technologies that support electric mobility, smart grids, and more.

Application

The IPP65R280E6 is a high-voltage N-channel MOSFET used in various applications, including DC-DC converters, motor drives, power supplies, and renewable energy systems. Its features, such as low on-resistance and fast switching capabilities, make it suitable for efficient power management in industrial, automotive, and consumer electronics sectors.

Equivalent

The IPP65R280E6 is a MOSFET from Infineon, specifically designed for high power applications. Equivalent products include the STP65R280, NTP65R280, and FQP65R280. Always check datasheets for specific characteristics like Rds(on), Vds, and current ratings to ensure compatibility with your application.

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