IPT007N06NATMA1

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IPT007N06NATMA1

MOSFET N-CH 60V 300A 8HSOF

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Spezifikationen

Series OptiMOS™
Part Status Active
Base Product Number IPT007
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 0.75mOhm @ 150A, 10V
Vgs(th) (Max) @ Id 3.3V @ 280µA
Gate Charge (Qg) (Max) @ Vgs 287 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 16000 pF @ 30 V
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-8-1
Package 8-PowerSFN
Packaging Cut Tape (CT), Tape & Reel (TR)

Übersicht

Description

IPT007N06NATMA1 is a course or unit code that typically refers to a specific subject or training module within an educational or vocational framework. While the exact details can vary based on the institution or program, courses labeled like this often focus on a particular skill set or knowledge area, potentially related to information technology or process training.
The "IPT" prefix might suggest a focus on Information Processing Technology, while the subsequent alphanumeric characters denote a specific identifier for the course. The course might cover topics such as data management, software applications, programming, or technical skills necessary for careers in technology or related fields.
For specific objectives, content, and learning outcomes, it would be necessary to refer to the syllabus or official curriculum provided by the institution offering the course.

Features

The IPT007N06NATMA1 is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: Typically operates at a maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: Can handle a continuous drain current (I_D) of up to 70A, providing robust performance in demanding environments.
3. R_DS(on): Features a low on-resistance, typically around 7 mΩ, enhancing efficiency and reducing heat generation during operation.
4. Gate Threshold Voltage: Offers a gate-source threshold voltage (V_GS(th)) of approximately 2-4V, facilitating easy driving with low-voltage control signals.
5. Package Type: Available in a DPAK package, which provides efficient thermal management and ease of PCB assembly.
6. Fast Switching Speed: Suitable for high-frequency applications, minimizing switching losses.
These characteristics make the IPT007N06NATMA1 ideal for use in automotive, industrial, and consumer electronics applications.

Package

The IPT007N06NATMA1 is packaged in a DPAK (TO-252) format. This surface-mount package is designed for power applications, offering efficient thermal performance and space-saving benefits.

Pinout

The IPT007N06NATMA1 is a N-channel MOSFET manufactured by Infineon Technologies. It features a total of 3 pins, which are designated for the following functions:
1. Gate (G): This pin controls the MOSFET. Applying a voltage to this pin allows current to flow between the drain and source.
2. Drain (D): This pin is where the load is connected, and it serves as the output for the device. It conducts current when the MOSFET is in the ON state.
3. Source (S): This pin connects to the ground or negative side of the circuit. It is the reference point for the drain current.
The IPT007N06NATMA1 is designed for high-efficiency applications and has a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of up to 80A.

Manufacturer

The IPT007N06NATMA1 is manufactured by Infineon Technologies, a global semiconductor manufacturer headquartered in Germany. Infineon specializes in a wide range of semiconductor solutions, including power management, automotive electronics, and security technologies. The company focuses on developing innovative products that enhance energy efficiency and performance across various applications, such as automotive, industrial, and consumer electronics. Infineon is known for its high-quality components, including MOSFETs, which are widely used in power conversion and management systems.

Application

The IPT007N06NATMA1 is a Power MOSFET primarily used in applications such as DC-DC converters, power management systems, and motor control. Its features make it suitable for high-efficiency switching in consumer electronics, automotive power supplies, and renewable energy systems. Additionally, it is utilized in industrial automation and telecommunications for efficient power distribution and management.

Equivalent

The IPT007N06NATMA1 is an N-channel MOSFET. Equivalent products include the IRF3205, STP75N06, and FQP75N06. Be sure to check specifications such as voltage rating, current capacity, and RDS(on) to ensure compatibility for your specific application.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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