IPT012N08N5ATMA1

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IPT012N08N5ATMA1

MOSFET N-CH 80V 300A 8HSOF

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Spezifikationen

Supplier Infineon Technologies
Package Tape & Reel (TR),Cut Tape (CT)
Series OptiMOS™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 80 V
Current-ContinuousDrain(Id)@25°C 300A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 1.2mOhm @ 150A, 10V
Vgs(th)(Max)@Id 3.8V @ 280µA
GateCharge(Qg)(Max)@Vgs 223 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 17000 pF @ 40 V
PowerDissipation(Max) 375W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PG-HSOF-8-1

Übersicht

Description

The IPT012N08N5ATMA1 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It belongs to the Infineon family of components, specifically tailored for power management in various electronic circuits.
Key features include a low on-resistance, making it suitable for applications where minimal power loss is critical. It has a high voltage rating of 80V and can handle significant current levels, making it ideal for use in switching power supplies, automotive applications, and motor control systems.
The device is constructed with advanced technology to ensure reliable performance under harsh conditions, ensuring longevity and stability in demanding environments. Its compact package allows for easy integration into various designs, supporting both through-hole and surface mount configurations.
Overall, the IPT012N08N5ATMA1 is an essential component for engineers seeking efficient and reliable solutions in power electronics.

Features

The IPT012N08N5ATMA1 is a high-performance N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 80V, making it suitable for high-voltage applications.
2. Current Rating: A continuous drain current (I_D) of 12A, allowing it to handle significant loads.
3. R_DS(on): Low on-resistance (approx. 12mΩ at V_GS = 10V), which enhances efficiency by reducing conduction losses.
4. Gate Threshold Voltage: A gate threshold voltage (V_GS(th)) of 2-4V, enabling operation with low gate drive voltages.
5. Package Type: Available in a TO-220 package, facilitating effective heat dissipation.
6. Fast Switching Speed: Suitable for applications requiring rapid switching, such as power supplies and motor drivers.
7. Thermal Resistance: Features low thermal resistance for better thermal performance.
Overall, the IPT012N08N5ATMA1 is ideal for applications in power management, automotive, and industrial systems.

Package

The IPT012N08N5ATMA1 is packaged in a TO-220 package type, which is designed for efficient thermal management and easy mounting in power applications.

Pinout

The IPT012N08N5ATMA1 is an N-channel MOSFET transistor from Infineon Technologies. It features a total of 5 pins. Here are the functions of each pin:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to this pin turns the MOSFET on or off.
2. Drain (D): This is the terminal where the current flows out of the transistor when it is in the ON state.
3. Source (S): This pin is where the current enters the transistor. It is connected to the ground in typical applications.
4. Source (S): There are typically two source pins for better heat dissipation and current handling.
5. Gate (G): Like the source, there may be two gate pins to allow for better driving capability.
This device is designed for high-efficiency switching applications, commonly used in power management and conversion circuits.

Manufacturer

The IPT012N08N5ATMA1 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor company headquartered in Neubiberg, Germany. It specializes in developing and manufacturing a wide range of semiconductor and system solutions for various applications, including automotive, industrial, and consumer electronics. Infineon focuses on power management, efficiency, and connectivity technologies, playing a significant role in enabling energy-efficient solutions and innovations in the semiconductor industry.

Application

The IPT012N08N5ATMA1 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module primarily used in applications such as motor drives, power inverters, and industrial automation. It is also suitable for renewable energy systems, including solar inverters and wind energy converters, as well as in electric vehicles and high-frequency switching applications due to its efficiency and thermal performance.

Equivalent

The IPT012N08N5ATMA1 is an IGBT (Insulated Gate Bipolar Transistor) module. Equivalent products include the Infineon IGBT series, such as the FGH40N60SMD, and the Nexperia PSMN4R5-80BS, among others. Always verify specifications like voltage, current ratings, and package type before substituting.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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