IPT017N12NM6ATMA1

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IPT017N12NM6ATMA1

OPTIMOS 6 POWER-TRANSISTOR,120V

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Spezifikationen

Series OptiMOS™ 6
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120 V
Current - Continuous Drain (Id) @ 25°C 29A (Ta), 331A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 150A, 10V
Vgs(th) (Max) @ Id 3.6V @ 275µA
Gate Charge (Qg) (Max) @ Vgs 141 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11000 pF @ 60 V
Power Dissipation (Max) 3W (Ta), 395W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-8
Package / Case 8-PowerSFN
Base Product Number IPT017

Übersicht

Description

IPT017N12NM6ATMA1 is a part number for a specific N-channel MOSFET produced by Infineon Technologies. This device is designed for high-efficiency power management applications, featuring a low on-resistance (RDS(on)) which minimizes energy loss during operation. Its specifications typically include a voltage rating of 1200V and a continuous drain current rating suitable for various power switching applications.
The device is optimized for applications such as motor drives, power supplies, and renewable energy systems, where high efficiency and reliability are essential. The package type is usually a TO-247, allowing for effective heat dissipation, which is critical in high-power environments. With advanced technology, the IPT017N12NM6ATMA1 offers excellent thermal performance and switching characteristics, making it an ideal choice for engineers looking to enhance the performance of their electronic designs. Always refer to the official datasheet for detailed specifications and application guidance.

Features

The IPT017N12NM6ATMA1 is a power MOSFET from Infineon Technologies. It features:
1. Voltage Rating: 1200V, making it suitable for high-voltage applications.
2. Current Rating: 17A, allowing it to handle substantial load currents.
3. RDS(on): Low on-resistance, typically around 0.017 ohms, which reduces conduction losses and improves efficiency.
4. Gate Threshold Voltage (VGS): Designed for efficient switching with optimal gate drive requirements.
5. Fast Switching Capabilities: Enhances performance in applications requiring rapid switching.
6. Package: Comes in a TO-247 package, facilitating improved thermal performance and ease of mounting.
7. Applications: Ideal for use in power supplies, inverters, motor drives, and other high-frequency applications.
This MOSFET excels in thermally demanding environments, making it suitable for industrial and automotive applications. Its robust performance characteristics contribute to high efficiency and reliability in power management systems.

Package

The IPT017N12NM6ATMA1 is packaged in a TO-247 format. This package type is designed for power applications, providing efficient thermal management and robust electrical performance.

Pinout

The IPT017N12NM6ATMA1 is an N-channel power MOSFET manufactured by Infineon Technologies. It features a total of 4 pins. The pinout and functions are as follows:
1. Gate (G): Controls the MOSFET's switching operation.
2. Drain (D): Connected to the load; the current flows out of this terminal when the MOSFET is on.
3. Source (S): Connected to the ground or return path; the current flows into this terminal when the MOSFET is on.
4. Tab (or heatsink): This is usually electrically connected to the source and may be used for heat dissipation.
The IPT017N12NM6ATMA1 is designed for applications requiring high efficiency and fast switching in power conversion systems, such as inverters and motor drives. It is notable for its low on-resistance and high thermal performance.

Manufacturer

The IPT017N12NM6ATMA1 is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in the design and production of a wide range of semiconductor solutions, focusing on areas such as power management, automotive applications, industrial power control, and security. The company is well-known for its innovations in power semiconductors, including MOSFETs, IGBTs, and other components used in various applications like renewable energy systems, electric vehicles, and consumer electronics. Infineon is recognized for its commitment to sustainability and efficiency in electronics, positioning itself as a key player in the semiconductor industry.

Application

The IPT017N12NM6ATMA1 is a high-performance IGBT (Insulated Gate Bipolar Transistor) optimized for applications in industrial drives, renewable energy systems (like solar inverters), uninterruptible power supplies (UPS), and motor control. Its efficient switching capabilities make it suitable for high-power applications, enhancing energy efficiency in power electronics equipment.

Equivalent

The IPT017N12NM6ATMA1 is an IGBT module from Infineon, primarily used in industrial applications. Equivalent products include the STGWA50H65, FGA25N120, and the IXGH40N120. When looking for alternatives, consider voltage ratings, current capacities, and switching characteristics to ensure compatibility in your application. Always verify with manufacturer specifications for the best match.

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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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