IPW65R095C7

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IPW65R095C7

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Spezifikationen

Technology Si
Packaging Tube
Brand Infineon Technologies
Product Type MOSFETs
Series CoolMOS C7
Factory Pack Quantity:Factory Pack Quantity 240
Subcategory Transistors
Part # Aliases SP001080128 IPW65R095C7XKSA1
Mounting Style Through Hole
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Height 21.1 mm
Length 16.13 mm
Width 5.21 mm
Unit Weight 0.211644 oz
Package / Case TO-247-3
Configuration Single
Tradename CoolMOS
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 24 A
Rds On - Drain-Source Resistance 84 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 45 nC
Pd - Power Dissipation 128 W
Channel Mode Enhancement
Fall Time 7 ns
Rise Time 12 ns
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 60 ns
Typical Turn-On Delay Time 14 ns

Übersicht

Description

The IPW65R095C7 is a high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power switching applications. With a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) rating of up to 95A, it is suitable for use in power supplies, inverters, and motor control circuits.
Key features include low on-resistance (R_DS(on)) for reduced conduction losses, fast switching speeds for improved efficiency, and high thermal stability. The MOSFET's structure allows for effective heat dissipation, making it viable for high-performance applications.
The C7 designation indicates its package type, which is often the TO-247 or similar, facilitating easier heat management and assembly. Overall, the IPW65R095C7 is favored for its reliability and efficiency in high-power applications, particularly in renewable energy systems and industrial power electronics.

Features

The IPW65R095C7 is an Infineon power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: 650V, making it suitable for high-voltage applications.
2. Rds(on): Low on-resistance of 0.095 ohm (at Vgs = 10V), ensuring minimal conduction losses.
3. Current Rating: Capable of handling a continuous drain current of up to 75A, depending on the thermal conditions.
4. Gate Threshold Voltage: Provides a threshold voltage in the range of 2-4V, aiding in easier drive circuit integration.
5. Package: Available in a TO-247 package, facilitating efficient heat dissipation.
6. Fast Switching: Optimized for fast switching applications, which is beneficial in inverter and converter designs.
7. CoolMOS Technology: Employs Infineon's CoolMOS technology, enhancing efficiency and thermal performance.
These features make the IPW65R095C7 ideal for power supplies, motor drives, and renewable energy applications.

Package

The IPW65R095C7 is packaged in a TO-247 format, which is a standard package for power MOSFETs providing efficient thermal performance and easy mounting.

Pinout

The IPW65R095C7 is an N-channel MOSFET from Infineon's CoolMOS™ family. It has a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G): Controls the MOSFET's switching; signals the device to turn on or off.
2. Drain (D): The terminal through which the load current flows; it connects to the load.
3. Source (S): The terminal that is connected to the ground or negative supply; serves as the return path for the current.
4. Body Diode (integrated): Provides a path for current when the MOSFET is off and voltage polarity is reversed.
5. Substrate (common): Typically internally connected to the source; serves as the substrate for the device.
This MOSFET is rated for a maximum drain-source voltage of 650V and has a low on-resistance, making it suitable for high-efficiency applications in power electronics.

Manufacturer

The IPW65R095C7 is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer based in Germany. Infineon specializes in providing semiconductor and system solutions for various applications, including automotive, industrial, and consumer electronics. The company is known for its expertise in power semiconductors, microcontrollers, and sensors, contributing to advancements in energy efficiency, mobility, and security. Infineon is recognized for its commitment to innovation and sustainability, driving the development of technologies that enhance connectivity and reduce power consumption across different industries.

Application

The IPW65R095C7 is an N-channel MOSFET primarily used in power management applications. Its areas of application include automotive systems, renewable energy systems (like solar inverters), industrial motor drives, and high-efficiency power supplies. Its low on-resistance and high voltage handling capabilities make it suitable for switch-mode power supplies (SMPS) and DC-DC converters, enhancing energy efficiency in various electronic devices.

Equivalent

The IPW65R095C7 is a N-channel MOSFET with a maximum voltage rating of 650V and a continuous drain current of 95A. Equivalent products include:
1. STP65NF75 (STMicroelectronics)
2. IRF840 (Infineon)
3. FQP30N60C (ON Semiconductor)
Always verify specifications such as voltage, current, and Rds(on) to ensure compatibility for your application.

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Versandgebührenreferenz (DHL/FedEx):

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von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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