IPW65R110CFDA

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IPW65R110CFDA

MOSFETs N-Ch 650V 31.2A TO247-3

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Spezifikationen

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Standard Pack Qty 240

Übersicht

Description

The IPW65R110CFDA is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from Infineon Technologies, specifically designed for power applications. It features a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) rating of 110A, making it suitable for high-voltage and high-current applications.
Key characteristics include a low on-resistance (R_DS(on)), which minimizes power losses during operation and enhances efficiency. The device is often used in power converter circuits, motor drives, and inverters for renewable energy systems.
The IPW65R110CFDA is housed in a TO-247 package, facilitating efficient thermal management and easy integration into various electronic designs. With its robust construction and reliable performance, it addresses the needs of modern power electronics, contributing to improved efficiency and thermal performance in demanding applications.

Features

The IPW65R110CFDA is an N-channel MOSFET designed for high-efficiency applications. Key features include:
- Voltage Rating: 650V, making it suitable for high-voltage applications.
- Current Rating: Capable of handling up to 110A, ensuring robust performance in demanding environments.
- RDS(on): Low on-resistance (0.110 ohms) enhances efficiency and minimizes power loss during operation.
- Gate Charge (Qg): Low gate charge (around 80 nC) for fast switching speeds, improving overall system efficiency.
- Packaging: Available in a TO-247 package, facilitating effective heat dissipation.
- Thermal Resistance: Low thermal resistance helps in managing heat better, allowing for higher reliability in operation.
These features make the IPW65R110CFDA ideal for use in power supplies, motor drives, and other applications requiring efficient switching performance in high-voltage environments.

Package

The IPW65R110CFDA is packaged in a TO-247 format. This package type is commonly used for power transistors and offers good thermal performance and easy mounting in various applications.

Pinout

The IPW65R110CFDA is an N-channel MOSFET, specifically from Infineon's CoolMOS series. It features a total of 6 pins. The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): Connects to the load; current flows from drain to source when the MOSFET is on.
3. Source (S): Connected to ground in typical applications; this is the terminal from which current exits when the MOSFET is conducting.
The device is designed for high efficiency in power conversion applications, such as switch-mode power supplies and DC-DC converters, operating at high voltages (up to 650V) and moderate currents. Its low on-resistance (RDS(on)) allows for reduced power losses during operation.

Manufacturer

The IPW65R110CFDA is manufactured by Infineon Technologies AG, a semiconductor manufacturer based in Germany. Infineon focuses on developing and providing a wide range of semiconductor solutions, including power semiconductors, sensors, microcontrollers, and automotive electronics. The company is known for its innovations in power management, efficiency, and reliability, serving various industries such as automotive, industrial, and consumer electronics. Infineon is a key player in the global semiconductor market, emphasizing sustainability and cutting-edge technology in its products.

Application

The IPW65R110CFDA is a 650V N-channel MOSFET used in various applications, including power supplies, motor drives, industrial automation, renewable energy systems (like solar inverters), and electric vehicles. Its high efficiency and fast switching capabilities make it suitable for switching applications in DC-DC converters, power factor correction circuits, and high-frequency applications.

Equivalent

The IPW65R110CFDA is a 650V N-channel MOSFET. Equivalent products include the Infineon IPW65R110C7, ON Semiconductor NTP65R110, and STMicroelectronics STP65N65M5. Always verify specific parameters like RDS(on), VGS(th), and package type for compatibility in your application.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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