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IR2109STRPBF
IR2109S - GATE DRIVER
- Hersteller
- Fr. Teil #IR2109STRPBF
- Paket SOIC-8
- Datenblatt IR2109STRPBF DataSheet
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Spezifikationen
| Package | Bulk |
| ProductStatus | Active |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Synchronous |
| NumberofDrivers | 2 |
| GateType | IGBT, N-Channel MOSFET |
| Voltage-Supply | 10V ~ 20V |
| LogicVoltage-VILVIH | 0.8V, 2.9V |
| Current-PeakOutput(SourceSink) | 200mA, 350mA |
| InputType | Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 600 V |
| Rise/FallTime(Typ) | 150ns, 50ns |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Übersicht
Description
The device features under-voltage lockout protection and is capable of handling rapid switching frequencies, enhancing efficiency and performance in power management systems. The IR2109STRPBF is also noted for its robust floating channel, which can be used for bootstrap operation up to 600V.
In terms of packaging, it usually comes in a 14-lead SOIC package, providing a compact form factor suitable for a variety of designs. It is RoHS compliant, ensuring that it meets environmental and safety standards. Overall, the IR2109STRPBF is valued for its reliability and versatility in driving power transistors in various industrial applications.
Features
1. High-Side and Low-Side Drivers: It provides separate high-side and low-side referenced output channels.
2. Bootstrap Circuitry: Built-in circuitry for bootstrap operation, facilitating high-side drive capability.
3. Floating Channel Capability: Operates up to 600V, enabling high-voltage applications.
4. Undervoltage Lockout (UVLO): Ensures the gate driver does not operate if supply voltage is too low, protecting power transistors from damage.
5. Logic Inputs: Compatible with standard CMOS or LSTTL outputs, down to 3.3V.
6. Propagation Delay: Offers matched propagation delays, typically around 120 ns, minimizing shoot-through risk.
7. Dead Time Insertion: Programmable dead time to prevent simultaneous conduction of high-side and low-side transistors.
8. Current Consumption: Low quiescent current, enhancing efficiency.
9. Package and Thermal Performance: Available in an 8-lead SOIC package, ensuring compact design and efficient thermal performance.
These features make the IR2109STRPBF suitable for applications like motor drives, power supplies, and other systems requiring high-voltage, high-speed switching.
Package
Pinout
1. VCC: Power supply for the logic and low-side gate driver.
2. IN: Logic input for controlling the high-side and low-side outputs.
3. VS: High-side floating supply return. It is typically connected to the source of the high-side MOSFET.
4. VB: High-side floating supply voltage. It is used to drive the high-side MOSFET.
5. HO: High-side gate drive output. Connected to the gate of the high-side MOSFET.
6. COM: Common ground reference for the low-side driver.
7. LO: Low-side gate drive output. Connected to the gate of the low-side MOSFET.
8. NC: No connection.
The IR2109STRPBF is designed to provide efficient, reliable gate-driving capabilities with protection features suitable for a wide range of applications, such as motor drives, power supplies, and other half-bridge circuits.
Manufacturer
Application
Equivalent
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Zahlungen
Payment Methods
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