IR2130S

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IR2130S

IC GATE DRVR HALF-BRIDGE 28SOIC

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Spezifikationen

Package Tube
ProductStatus Obsolete
DrivenConfiguration Half-Bridge
ChannelType 3-Phase
NumberofDrivers 6
GateType IGBT, N-Channel MOSFET
Voltage-Supply 10V ~ 20V
LogicVoltage-VILVIH 0.8V, 2.2V
Current-PeakOutput(SourceSink) 250mA, 500mA
InputType Inverting
HighSideVoltage-Max(Bootstrap) 600 V
Rise/FallTime(Typ) 80ns, 35ns
OperatingTemperature -40°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 28-SOIC (0.295, 7.50mm Width)

Übersicht

Description

"Introduction to IR2130S" likely refers to a course or module focused on International Relations (IR), given the common academic prefix for such subjects. Assuming this context, IR2130S would typically cover fundamental concepts and theories within the field of International Relations. Students might explore key topics such as the history of the international system, major theories like realism, liberalism, and constructivism, and current global issues such as conflict, cooperation, and diplomacy.
The course could also introduce students to the various actors involved in international relations, including states, international organizations, non-governmental organizations, and multinational corporations. Methods of analysis, critical thinking about global issues, and basic research skills relevant to IR might also be emphasized.
Given the code "IR2130S," this could be a second-year undergraduate course, suggesting a more in-depth exploration compared to an introductory-level class. The "S" might signify a specific semester or focus, depending on the institution's coding system. Ultimately, the course aims to provide students with a foundational understanding of how global interactions shape the world.

Features

The IR2130S is a high-voltage, high-speed power MOSFET and IGBT driver with three-phase bridge drive capability. Key features include:
1. Three-Phase Bridge Drive: It supports three high-side and three low-side referenced output channels, ideal for driving a three-phase motor.
2. Floating Channel: The driver has a floating channel designed for bootstrap operation, providing an offset voltage range up to 600V.
3. Undervoltage Lockout Protection: Both high-side and low-side drivers are equipped with undervoltage lockout to prevent malfunction under low voltage conditions.
4. CMOS Schmitt Triggered Inputs: These inputs ensure high noise immunity and are compatible with standard logic levels.
5. Output Drivers: The device features high-pulse current buffer stage drivers for efficient and fast switching.
6. Matched Propagation Delays: It offers matched propagation delay for all channels, ensuring synchronized operation.
7. Deadtime Protection: Built-in deadtime to prevent shoot-through by ensuring there is no simultaneous conduction of the high-side and low-side switches.
8. Bootstrap Circuitry: Simplifies the design by incorporating bootstrap diodes for high-side drive.
The IR2130S is commonly used in motor control, inverters, and other high-voltage applications requiring efficient and reliable gate driving.

Package

The IR2130S is a high-voltage, high-speed power MOSFET and IGBT driver with a 3-phase, 600V rating. It typically comes in a 28-lead, small outline integrated circuit (SOIC) package, which is designed for surface mounting. This package type is compact and suitable for applications requiring efficient space utilization on PCBs.

Pinout

The IR2130S is a high-voltage, high-speed power MOSFET and IGBT driver with three high-side and three low-side referenced output channels. It is designed for three-phase power inverter applications in motor drive and power supply applications. The IR2130S is available in a surface-mount package.
The IR2130S has a total of 28 pins. The key functions of these pins are as follows:
- VCC, VDD: Logic and low-side driver supply voltage.
- VB1, VB2, VB3: High-side floating supply voltages for each phase.
- VS1, VS2, VS3: High-side floating supply return for each phase.
- HO1, HO2, HO3: High-side gate drive outputs for each phase.
- LO1, LO2, LO3: Low-side gate drive outputs for each phase.
- COM: Common ground.
- HIN1, HIN2, HIN3: Logic inputs for high-side gate drivers.
- LIN1, LIN2, LIN3: Logic inputs for low-side gate drivers.
- FAULT: Fault reporting output.
- ITRIP: Overcurrent shutdown input.
- EN: Enable input.
These pins enable the IR2130S to efficiently control the switching of power devices in a three-phase configuration, providing essential functions like gate drive, fault handling, and protection.

Manufacturer

The IR2130S is manufactured by Infineon Technologies AG, which is a German multinational corporation. Infineon is known for designing and manufacturing a wide range of semiconductor solutions, including microcontrollers, power semiconductors, and sensors. The company operates in various sectors including automotive, industrial power control, power management, and digital security solutions, providing technology that enables efficient energy management, connectivity, and security in electronic devices.

Application

The IR2130S is a high-voltage, high-speed power MOSFET and IGBT driver. It is commonly used in motor control applications, uninterruptible power supplies (UPS), and renewable energy systems like solar inverters. Additionally, it finds applications in industrial automation, switched-mode power supplies, and electric vehicle systems, where efficient and reliable control of power devices is critical.

Equivalent

The IR2130S is a high-voltage, high-speed power MOSFET and IGBT driver with three-phase bridge driver capabilities. Equivalent products might include the IR2132, IR2133, IR2135, and other similar high-voltage gate drivers from manufacturers like Infineon Technologies, ON Semiconductor, or Texas Instruments. Always cross-reference the datasheet specifications to ensure compatibility with your application.

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