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IRF100S201
MOSFET N-CH 100V 192A D2PAK
- Hersteller
- Fr. Teil #IRF100S201
- Paket TO-263-3,D2PAK(2Leads+Tab),TO-263AB
- Datenblatt IRF100S201 DataSheet
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | HEXFET®, StrongIRFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 192A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 4.2mOhm @ 115A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 255 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 9500 pF @ 50 V |
| PowerDissipation(Max) | 441W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PG-TO263-3 |
Übersicht
Description
Key specifications often include a high voltage rating, typically around 100V, and a maximum continuous current rating, which can vary based on the package type and thermal management. The IRF100S201 is designed to handle high pulse current, making it ideal for demanding applications.
Its gate threshold voltage is optimized for low drive requirements, and it can be driven directly by microcontrollers or logic-level devices. The package options may vary, but they are designed for easy integration into circuit designs. Overall, the IRF100S201 is a versatile component in the field of power electronics.
Features
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.
2. Continuous Drain Current: Offers a high continuous drain current (I_D) rating of up to 200A, allowing it to handle significant load currents.
3. Low On-Resistance: Features a low R_DS(on) of around 0.018 ohms, which minimizes power losses and enhances efficiency during operation.
4. Fast Switching Speed: Optimized for fast switching, reducing the transition losses in high-frequency applications.
5. Thermal Management: Designed with a robust thermal performance, allowing it to operate effectively in various thermal conditions (with proper heatsinking).
6. Package Type: Available in a TO-220 package, facilitating easy integration into circuits and effective heat dissipation.
Overall, the IRF100S201 is suitable for applications in power supplies, motor drives, and other high-efficiency circuitry.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D): The drain is the terminal through which the current flows out of the MOSFET when it is turned on.
3. Source (S): The source is the terminal through which current enters the MOSFET when it is conducting.
Key specifications include high voltage and current handling capabilities, making it suitable for various power management applications. Always refer to the specific datasheet for precise electrical characteristics and ratings.
Manufacturer
Application
Equivalent
Versand
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Zahlungen
Payment Methods
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