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IRF1404PBF
MOSFET N-CH 40V 202A TO220AB
- Hersteller
- Fr. Teil #IRF1404PBF
- Paket TO220
- Datenblatt IRF1404PBF DataSheet
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Spezifikationen
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 202A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 4mOhm @ 121A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 196 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 5669 pF @ 25 V |
| PowerDissipation(Max) | 333W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
Übersicht
Description
The IRF1404PBF is housed in a TO-220 package, allowing for efficient heat dissipation. It also has a fast switching speed, suitable for applications such as DC-DC converters, motor drives, and power inverters. The "PBF" in its designation indicates that it is lead-free and compliant with RoHS standards, which makes it environmentally friendly.
Overall, the IRF1404PBF is a versatile and reliable choice for various electronic circuits requiring efficient power control and switching capabilities.
Features
1. Voltage Rating: Maximum Drain-Source Voltage (V_DS) of 40V, suitable for various power applications.
2. Current Rating: Continuous Drain Current (I_D) of up to 40A, allowing it to handle significant loads.
3. RDS(on): Low on-resistance (R_DS(on)) of approximately 0.025 ohms, which minimizes power loss during operation.
4. Gate Threshold Voltage (V_GS(th)): Typically between 2V to 4V, enabling effective switching even with lower gate voltages.
5. Package: Available in a TO-220 package, facilitating heat dissipation and ease of mounting.
6. Fast Switching Speed: Suitable for fast-switching applications, improving overall system efficiency.
7. Applications: Commonly used in power supplies, motor drivers, and DC-DC converters.
Overall, the IRF1404PBF is a reliable choice for designers seeking efficient and robust MOSFET solutions.
Package
Pinout
1. Gate (G): Controls the MOSFET's switching operation.
2. Drain (D): The terminal through which the current flows out of the MOSFET when it is turned on.
3. Source (S): The terminal through which the current flows into the MOSFET when it is in the on state.
Additional pins may include:
4. Gate (G): For certain configurations in dual package variants.
5. Drain (D): For additional drain connections in specific applications.
6. Source (S): For additional source connections in specific applications.
The IRF1404PBF is designed for high-speed switching applications and can handle high current and voltage, making it suitable for power management tasks in various electronic circuits. It features low on-resistance and fast switching speeds for improved efficiency.
Manufacturer
Application
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Versand
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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
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