IRF200P223

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IRF200P223

MOSFET N-CH 200V 100A TO247AC

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Spezifikationen

Supplier Infineon Technologies
Package Tube
Series StrongIRFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 100A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 11.5mOhm @ 60A, 10V
Vgs(th)(Max)@Id 4V @ 270µA
GateCharge(Qg)(Max)@Vgs 102 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 5094 pF @ 50 V
PowerDissipation(Max) 313W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247AC

Übersicht

Description

The IRF200P223 is a high-voltage N-channel MOSFET designed for power applications. It features a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) rating of 223A, making it suitable for demanding switching applications. With a low on-resistance (R_DS(on)), it enhances efficiency by minimizing conduction losses.
The device operates effectively in high-temperature environments, with a maximum junction temperature (T_j) of 175°C. Its fast switching capabilities are beneficial for applications such as power supplies, motor drives, and inverters, enabling efficient energy conversion.
The IRF200P223 is typically housed in a TO-220 package, allowing for easy heat dissipation. It is commonly used in automotive, industrial, and consumer electronics applications where reliable performance and efficiency are critical. Proper thermal management and gate drive considerations are essential for optimal performance in circuit designs.

Features

The IRF200P223 is a N-channel power MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 200V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 200A, allowing it to handle substantial loads.
3. On-Resistance: It exhibits a low on-resistance (R_DS(on)) of approximately 0.08 ohms, which contributes to lower power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2 to 4V, enabling compatibility with various gate drive circuits.
5. Package: It is typically available in a TO-220 package, allowing for efficient heat dissipation.
6. Fast Switching Speed: The device supports fast switching speeds, making it suitable for applications such as converters, inverters, and motor drives.
Overall, the IRF200P223 is ideal for demanding applications requiring high efficiency and thermal performance.

Package

The IRF200P223 is typically packaged in a TO-220 form factor. This package type is designed for power devices, providing good thermal performance and easy mounting on heatsinks.

Pinout

The IRF200P223 is a power MOSFET with a total of 3 pins. Its pin configuration is as follows:
1. Gate (G): This pin is used to control the switching of the MOSFET. A voltage applied to this pin turns the device on or off.
2. Drain (D): This pin connects to the load and carries the main current when the device is in the on state.
3. Source (S): This pin is connected to ground (or the negative side of the circuit) and completes the circuit for the current flowing through the MOSFET.
The IRF200P223 is designed for high-speed switching applications, making it suitable for use in power supplies, motor drivers, and various other electronic circuits. Its robust design allows it to handle significant voltages and currents, contributing to its versatility in power management applications.

Manufacturer

The IRF200P223 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in developing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors, primarily for automotive, industrial, and consumer applications. Infineon is known for its innovations in power management technologies and is a key player in the semiconductor industry, focusing on improving energy efficiency and sustainability in various electronic systems.

Application

The IRF200P223 is an N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor drivers, and power inverters. Its high-speed switching capability makes it suitable for applications in electronic ballast, LED drivers, and power supplies. Additionally, it can be found in automotive electronics and industrial automation for efficient power control and thermal management.

Equivalent

The IRF200P223 is a power MOSFET, and equivalent products include devices like the STP200N20, IXFH20N50P, and FQP20N50. It's essential to verify the specific ratings (voltage, current, RDS(on), etc.) to ensure compatibility for your application.

Versand

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Versandgebührenreferenz (DHL/FedEx):

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UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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