IRF2804

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IRF2804

MOSFET N-CH 40V 75A TO220AB

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Spezifikationen

Series HEXFET®
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 240 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6450 pF @ 25 V
Power Dissipation (Max) 330W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package TO-220-3
Packaging Tube

Übersicht

Description

IRF2804 is a high‑voltage, N‑channel power MOSFET from International Rectifier (now Infineon). It’s used as a switching element in power electronics such as switch‑mode power supplies, motor controllers, and inverters. Key points you’ll find in the datasheet:
- VDS in the hundreds of volts class (roughly 400 V).
- Continuous drain current in the amp-to-tens range.
- RDS(on) designed for efficiency, but typically higher than modern trench MOSFETs.
- Packages include TO‑220 and D²PAK.
Basic usage: source to ground, drain to the load, and gate driven with a suitable positive voltage relative to source (within VGS max, typically up to ±20 V). Include a gate resistor and a protection/diode for inductive loads; provide adequate heatsinking for dissipation.
For precise values (VDS, ID, RDS(on), Qg, thermal data), consult the latest IRF2804 datasheet.

Features

IRF2804 is an N-channel, enhancement-mode power MOSFET. Key features (typical, check datasheet for exact values):
- N-channel power MOSFET with low on-resistance
- High drain current capability with proper heatsinking
- Fast switching, suitable for high-frequency applications
- Robust body diode and avalanche energy rating for inductive loads
- Gate drive compatible with standard gate voltages (check threshold specs)
- Available in multiple packages (TO-220, D2PAK, DPAK, etc.)
- Wide operating temperature range (-55°C to +150°C or similar, depending on variant)
- RoHS compliant and suitable for switching regulators, DC-DC converters, motor drivers, and power amplification
Note: Exact Vds, Id, Rds(on), and package options vary by revision; consult the official datasheet for precise figures.

Package

IRF2804 is an N-channel power MOSFET in a through-hole TO-220AB (TO-220) package.

Pinout

IRF2804 is an N-channel enhancement-mode power MOSFET in a TO-220 style package.
- Pin count: 3 pins (plus a metal tab).
- Pinout (front view, left to right): Pin 1 Gate (G), Pin 2 Drain (D), Pin 3 Source (S). The tab is Drain.
- Function: G controls current flow between Drain and Source; used as a high-current switch or regulator element in power circuits.

Manufacturer

Manufacturer: International Rectifier (IR). Type of company: a semiconductor manufacturer specializing in power semiconductors (MOSFETs, IGBTs, diodes, drivers); now part of Infineon Technologies.

Application

IRF2804 is an N-channel power MOSFET used in switching power electronics. Typical applications include:
- Switch-mode power supplies (SMPS) and DC-DC converters (buck/boost)
- Motor drives (DC motors, stepper, small BLDC)
- AC/DC adapters and general power-management circuits
- Automotive and industrial power electronics
- Solar charge controllers and inverters

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