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IRF2804STRL7PP
MOSFET N-CH 40V 160A D2PAK
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- Fr. Teil #IRF2804STRL7PP
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- Datenblatt IRF2804STRL7PP DataSheet
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Spezifikationen
| Series | HEXFET® |
| Part Status | Obsolete |
| Base Product Number | IRF2804 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 160A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6930 pF @ 25 V |
| Power Dissipation (Max) | 330W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK (7-Lead) |
| Package | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Übersicht
Description
Key specifications include a maximum drain-source voltage (V_DS) of 40V, a continuous drain current (I_D) of up to 100A, and a fast switching speed, making it suitable for high-frequency applications. The device typically comes in a TO-220 package, which ensures effective thermal performance and ease of heat dissipation.
The IRF2804 is also known for its compatibility with standard gate drive voltages, allowing straightforward integration into existing designs. Its robustness and efficiency make it a popular choice among engineers for modern electronic systems requiring reliable power management solutions.
Features
1. V_DS Rating: Up to 40V, suitable for various voltage applications.
2. I_D Rating: Continuous drain current of 80A, providing high current handling capabilities.
3. Low R_DS(on): Typically around 5.0 mΩ, which minimizes conduction losses and increases efficiency.
4. Fast Switching Speed: Ideal for high-frequency applications, leading to reduced switching losses.
5. Gate Threshold Voltage (V_GS(th)): Typically between 1V to 2.5V, allowing for easy drive with low voltage levels.
6. Thermal Resistance: Offers good thermal management characteristics with a junction-to-case thermal resistance of around 0.5°C/W.
7. Package Type: Available in a TO-220 package, facilitating easy heat dissipation.
8. Applications: Commonly used in DC-DC converters, power management, and motor drives.
Overall, the IRF2804STRL7PP is recognized for its robustness and efficiency in power electronics.
Package
Pinout
### Pin Configuration:
1. Gate 1 (G1): Controls the first MOSFET.
2. Drain 1 (D1): Drain connection for the first MOSFET.
3. Source 1 (S1): Source connection for the first MOSFET.
4. Gate 2 (G2): Controls the second MOSFET.
5. Drain 2 (D2): Drain connection for the second MOSFET.
6. Source 2 (S2): Source connection for the second MOSFET.
7. Common Source (CS): Shared source connection for both MOSFETs.
8. Thermal Pad (TP): For heat dissipation.
The IRF2804 provides high-speed switching and low on-resistance, making it suitable for various high-efficiency applications.
Manufacturer
Application
Equivalent
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Zahlungen
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