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IRF3205PBF
IRF3205 - 12V-300V N-CHANNEL POW
- Hersteller
- Fr. Teil #IRF3205PBF
- Paket TO-220-3
- Datenblatt IRF3205PBF DataSheet
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Spezifikationen
| Package | Bulk |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 55 V |
| Current-ContinuousDrain(Id)@25°C | 110A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 8mOhm @ 62A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 146 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 3247 pF @ 25 V |
| PowerDissipation(Max) | 200W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
Übersicht
Description
The device is housed in a TO-220 package, which provides efficient heat dissipation. Additionally, the IRF3205PBF has a fast switching speed, contributing to improved overall system efficiency. Its gate threshold voltage (VGS(th)) typically ranges from 2 to 4V, making it compatible with low-voltage driving circuits. The "PBF" suffix indicates that it is lead-free, aligning with environmental regulations.
In summary, the IRF3205PBF is a robust and efficient MOSFET ideal for various power applications, combining high current capacity and low on-resistance for effective performance.
Features
- Voltage Rating: 55V maximum drain-source voltage (V_DS).
- Current Rating: Can handle continuous drain current up to 110A (at 25°C).
- R_DS(on): Low on-resistance, typically 8 mΩ at V_GS = 10V, which enhances efficiency.
- Gate Threshold Voltage (V_GS(th)): Ranges from 2V to 4V, allowing for lower gate drive voltages.
- Fast Switching: Suitable for high-frequency applications due to low input capacitance and fast switching times.
- Package: Available in TO-220 and DPAK packages, facilitating thermal management and assembly.
- Applications: Commonly used in power supplies, motor drivers, and DC-DC converters.
Overall, the IRF3205PBF delivers high performance in demanding environments, making it a popular choice for various power electronics applications.
Package
Pinout
1. Gate (G): This pin controls the MOSFET's switching operation. A voltage applied here turns the device on or off.
2. Drain (D): This pin is where the load connects. Current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or negative side of the power supply. Current flows out of this pin when the MOSFET is conducting.
4. Body Diode: The MOSFET also contains an intrinsic body diode, allowing current to flow from the source to the drain when reverse-biased.
5. Tab (thermal pad): Often used for heat dissipation in an appropriate package.
The IRF3205PBF is commonly used in applications such as power management, motor control, and switching power supplies due to its low on-resistance and high current handling capability.
Manufacturer
Application
Equivalent
Versand
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Zahlungen
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