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IRF3610SPBF
MOSFET N-CH 100V 103A D2PAK
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- Datenblatt IRF3610SPBF DataSheet
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Spezifikationen
| Series | HEXFET® |
| Part Status | Discontinued at Digi-Key |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 103A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 11.6mOhm @ 62A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5380 pF @ 25 V |
| Power Dissipation (Max) | 333W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3 |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
Übersicht
Description
This MOSFET features a low on-resistance (R_DS(on)) of approximately 0.035Ω, which reduces power losses during operation and enhances thermal performance. Its fast switching capabilities make it ideal for applications requiring high-frequency operation. The device comes in a TO-220 package, facilitating easy heat dissipation.
Additionally, the IRF3610SPBF is built to meet RoHS compliance, making it a suitable choice for environmentally-conscious designs. Overall, it combines high performance, reliability, and efficiency, making it a popular choice among engineers for various electronic and power applications.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 60A, enabling it to support high-load situations.
3. On-Resistance: The on-resistance (R_DS(on)) typically is around 0.04 ohms, ensuring low conduction losses and efficient operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy drive requirements.
5. Package Type: It comes in a TO-220 package, which aids in effective thermal management due to its good heat dissipation characteristics.
6. Fast Switching: The IRF3610SPBF exhibits rapid switching speeds, making it ideal for applications in power supplies and motor control.
This combination of features makes the IRF3610SPBF suitable for a wide range of applications, including DC-DC converters, automotive systems, and industrial controls.
Package
Pinout
1. Gate (G) - Input control for switching.
2. Drain (D) - Output connection for the load.
3. Source (S) - Ground reference or input for the load connection.
4. Body Diode - Internal diode between the Source and Drain, allows for reverse current flow.
The device is typically used in power management applications, including DC-DC converters, motor drivers, and power inverters, due to its low on-resistance and high-speed switching capabilities. The IRF3610SPBF can handle significant voltage and current, making it suitable for various high-power applications.
Manufacturer
Application
Equivalent
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Zahlungen
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