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IRF3808PBF
MOSFET N-CH 75V 140A TO220AB
- Hersteller
- Fr. Teil #IRF3808PBF
- Paket TO-220-3
- Datenblatt IRF3808PBF DataSheet
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Spezifikationen
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 75 V |
| Current-ContinuousDrain(Id)@25°C | 140A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 7mOhm @ 82A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 220 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 5310 pF @ 25 V |
| PowerDissipation(Max) | 330W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
Übersicht
Description
Its fast switching capabilities make it ideal for applications requiring rapid on-off transitions, enhancing overall efficiency. The device is encapsulated in a TO-220 package, providing effective heat dissipation. The "PBF" suffix indicates that it is lead-free, adhering to RoHS standards, making it environmentally friendly.
The IRF3808PBF is popular in power electronics design due to its reliability and performance characteristics, making it a preferred choice for engineers looking to optimize circuit designs without compromising on efficiency or performance.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The maximum continuous drain current (I_D) is 80A, allowing it to handle significant loads.
3. On-Resistance: It features a low R_DS(on) of approximately 9.5 mΩ at V_GS = 10V, which minimizes power losses during operation.
4. Gate Threshold Voltage: The threshold voltage (V_GS(th)) ranges between 2 to 4V, enabling efficient switching at lower gate voltages.
5. Package Type: It is available in a TO-220 package, facilitating heat dissipation and ease of mounting.
6. Fast Switching Speed: The device exhibits rapid switching capabilities, making it suitable for switching power supplies and inverter applications.
7. RoHS Compliant: It is environmentally friendly and complies with RoHS regulations.
These attributes make the IRF3808PBF ideal for various applications, including power management and automotive systems.
Package
Pinout
1. Gate (G): Controls the MOSFET's on/off state by applying a voltage.
2. Drain (D): The output terminal where current flows out when the MOSFET is on.
3. Source (S): The terminal through which current enters the MOSFET.
The pin arrangement is as follows (looking at the package from the top):
1. Gate
2. Source
3. Drain
4. Source
5. Drain
6. Source
7. Gate
8. Gate
The IRF3808PBF is designed for applications requiring high efficiency and low on-resistance, making it suitable for power management and switching applications. Its typical specifications include a maximum V_DS of 40V and I_D of 120A.
Manufacturer
Application
Equivalent
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Zahlungen
Payment Methods
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3. Überweisung
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