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IRF40R207
MOSFET N-CH 40V 56A TO252
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- Fr. Teil #IRF40R207
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- Datenblatt IRF40R207 DataSheet
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Spezifikationen
| Series | HEXFET®, StrongIRFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 5.1mOhm @ 55A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2110 pF @ 25 V |
| Power Dissipation (Max) | 83W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | IRF40R207 |
Übersicht
Description
This MOSFET is characterized by its fast switching speed, which enhances its performance in high-frequency applications. Additionally, it has a robust gate threshold voltage, allowing for reliable operation under different conditions. The IRF40R207 is often packaged in a TO-220 or similar housing, facilitating heat dissipation and integration into circuit boards.
When using the IRF40R207, it's essential to consider its thermal management and ensure it operates within specified limits to prevent damage. Overall, this component is valuable for engineers seeking reliable and efficient solutions in modern electronic designs.
Features
1. Voltage Rating: Typically rated for a maximum drain-source voltage (V_DS) of around 40V, making it suitable for medium-voltage applications.
2. Current Capacity: Capable of handling continuous drain currents up to approximately 70A, depending on the thermal conditions and package.
3. R_DS(on): Low on-resistance, typically around 0.025 ohms, which reduces power loss during operation and enhances efficiency.
4. Fast Switching: Designed for rapid switching speeds, ideal for applications like DC-DC converters and motor drivers.
5. Package Type: Available in various packages, often featuring a TO-220 or similar configuration for effective heat dissipation.
6. Thermal Performance: Good thermal stability, allowing for reliable operation at high temperatures.
These features make the IRF40R207 suitable for applications in power management, automotive systems, and industrial controls.
Package
Pinout
1. Gate (G) - Pin 1: Controls the MOSFET's on/off state.
2. Drain (D) - Pin 2: The main current-carrying terminal; connects to the load.
3. Source (S) - Pin 3: Connects to ground or the negative side of the power supply.
4. Gate (G) - Pin 4: Second gate connection for enhanced control (in some configurations).
5. Drain (D) - Pin 5: Second drain connection, allowing for parallel operation.
6. Source (S) - Pin 6: Second source connection, also facilitating parallel configurations.
The IRF40R207 is designed for high-efficiency switching applications and can handle significant current and voltage levels, making it suitable for various power management tasks in electronic circuits.
Manufacturer
Application
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Zahlungen
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