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IRF4905SPBF
MOSFET P-CH 55V 42A D2PAK
- Hersteller
- Fr. Teil #IRF4905SPBF
- Paket TO252-3
- Datenblatt IRF4905SPBF DataSheet
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Spezifikationen
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Obsolete |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 55 V |
| Current-ContinuousDrain(Id)@25°C | 42A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 20mOhm @ 42A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 180 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 3500 pF @ 25 V |
| PowerDissipation(Max) | 170W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
Übersicht
Description
Key specifications include:
- Threshold Voltage (V_GS(th)): Typically between 2-4V, allowing it to be driven effectively by low-voltage control signals.
- Package: Available in a TO-220 package, facilitating easy mounting and heat dissipation.
- Fast Switching Speeds: Suitable for high-frequency applications, contributing to improved performance in switching power supplies and motor control systems.
The IRF4905SPBF is often used in automotive, industrial, and consumer electronics due to its robustness and reliability. Always consult the datasheet for detailed electrical characteristics and thermal management guidelines.
Features
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of -55V.
2. Current Rating: Continuous drain current (I_D) is rated at -110A, making it suitable for high-load applications.
3. On-State Resistance: Low R_DS(on) of approximately 0.18 ohms at V_GS = -10V ensures minimal power loss during operation.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges from -2V to -4V, allowing it to switch on effectively at lower gate voltages.
5. Package: Available in a TO-220 package, facilitating easy heat dissipation.
6. Fast Switching: Designed for rapid switching, it enhances efficiency in PWM and other control applications.
7. Thermal Resistance: Low thermal resistance improves thermal management in high-power circuits.
These characteristics make the IRF4905SPBF suitable for various applications, including power management, motor control, and automotive systems.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A negative voltage relative to the source is applied to turn the device on (conducting state).
2. Drain (D): This pin is connected to the load. When the MOSFET is turned on, current flows from the source to the drain.
3. Source (S): This pin is connected to the positive supply voltage. The MOSFET conducts current from the source to the drain when active.
The IRF4905SPBF is commonly used in high-side switching applications and offers low on-resistance and high current handling capabilities.
Manufacturer
Application
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