IRF5210SPBF

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IRF5210SPBF

MOSFET P-CH 100V 38A D2PAK

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Spezifikationen

Package Tube
Series HEXFET®
ProductStatus Discontinued at Digi-Key
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 38A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 60mOhm @ 38A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 230 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 2780 pF @ 25 V
PowerDissipation(Max) 3.1W (Ta), 170W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D2PAK

Übersicht

Description

The IRF5210SPBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It features low on-resistance (Rds(on)), which minimizes power loss during operation, making it ideal for power management tasks. With a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of up to 50A, it can handle substantial loads while maintaining thermal stability.
The IRF5210SPBF is commonly used in applications such as DC-DC converters, motor control, and power inverters due to its fast switching speed and robustness. It comes in a TO-220 package, providing effective heat dissipation, which is crucial for high-power applications. Additionally, it is RoHS compliant, indicating it is free from hazardous materials. Overall, the IRF5210SPBF is a versatile choice for engineers looking for reliable performance in demanding electronic designs.

Features

The IRF5210SPBF is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various power applications.
2. Current Handling: The device can handle a continuous drain current (I_D) of up to 55A, which provides flexibility in design.
3. R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 0.27 ohms at a gate voltage (V_GS) of 10V, reducing power loss and improving efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy interfacing with microcontrollers and driver circuits.
5. Package: The IRF5210SPBF comes in a TO-220 package, facilitating heat dissipation.
6. Fast Switching: It offers high-speed switching capabilities, making it ideal for applications in power supplies, motor control, and inverter circuits.
These features make the IRF5210SPBF a robust choice for various electronic applications.

Package

The IRF5210SPBF is packaged in a TO-220 metal package. This package design allows for efficient heat dissipation and is commonly used for power MOSFET applications.

Manufacturer

The IRF5210SPBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in semiconductor solutions for automotive, industrial, and multimarket applications. The company focuses on power semiconductors, sensors, and microcontrollers, catering to various sectors including automotive, industrial, and consumer electronics. Infineon's products are widely used in applications that require energy efficiency, such as power management, electric vehicles, and renewable energy systems. The IRF5210SPBF specifically is a N-channel MOSFET designed for high-performance power applications.

Application

The IRF5210SPBF is an N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor drives, and switching power supplies. It is suitable for high-speed switching and can handle significant voltage and current, making it ideal for applications in automotive electronics, industrial control systems, and renewable energy systems. Its low on-resistance also enhances efficiency in power applications.

Equivalent

The IRF5210SPBF is a power MOSFET with similar characteristics to several other components. Equivalent products include the IRF520, IRF530, and STP16NF06. Additionally, the FQP30N06L and BSS139 may also serve as alternatives, depending on specific application needs such as voltage and current ratings. Ensure compatibility with your circuit's requirements before substitution.

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UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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