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IRF530NPBF
MOSFET N-CH 100V 17A TO220AB
- Hersteller
- Fr. Teil #IRF530NPBF
- Paket TO220-3
- Datenblatt IRF530NPBF DataSheet
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Spezifikationen
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 17A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 90mOhm @ 9A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 37 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 920 pF @ 25 V |
| PowerDissipation(Max) | 70W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
Übersicht
Description
This MOSFET is commonly used in applications such as power supplies, motor control, and DC-DC converters due to its fast switching capabilities and thermal performance. It is housed in a TO-220 package, allowing for easy heat dissipation. The IRF530NPBF is also RoHS compliant, indicating that it meets environmental regulations regarding hazardous substances.
When incorporating the IRF530NPBF in circuits, attention should be given to its gate drive voltage requirements and thermal considerations to ensure optimal performance and reliability.
Features
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 100V, allowing it to handle high voltages.
2. Current Rating: Continuous drain current (I_D) of up to 9.2A, making it suitable for various power applications.
3. R_DS(on): Low on-resistance of approximately 0.35 ohms at a gate-source voltage (V_GS) of 10V, ensuring efficient operation with minimal power loss.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges from 2V to 4V, facilitating easy drive from standard logic levels.
5. Fast Switching Speed: Suitable for applications requiring rapid on/off switching, such as in power converters and motor controls.
6. Package: Available in TO-220 and other packages for versatile mounting options.
7. Thermal Resistance: Low thermal resistance enhances heat dissipation, improving reliability in demanding environments.
These features make the IRF530NPBF a popular choice in industrial, automotive, and consumer electronics applications.
Package
Pinout
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate creates an electric field that allows current to flow between the drain and source.
2. Drain (D) - This pin is where the load is connected. The current flows from the drain to the source when the MOSFET is turned on.
3. Source (S) - This pin is the output and is connected to ground or the negative side of the load.
The IRF530 is commonly used for switching applications and amplification in power circuits. It is noted for its ability to handle high voltages and currents, making it suitable for various electronic applications.
Manufacturer
Application
Equivalent
1. IRF540N
2. STP16NF06
3. FQP30N06L
4. RFP30N06LE
Ensure to compare specifications such as voltage rating, current rating, and package type for compatibility.
Versand
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Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
1. PayPal
2. Kredit- / Debitkarte
3. Überweisung
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