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IRF540ZPBF
MOSFET N-CH 100V 36A TO220AB
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- Datenblatt IRF540ZPBF DataSheet
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Spezifikationen
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 26.5mOhm @ 22A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1770 pF @ 25 V |
| Power Dissipation (Max) | 92W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Base Product Number | IRF540 |
Übersicht
Description
This MOSFET is characterized by its fast switching speed, which is beneficial in reducing switching losses in power management circuits. It comes in a TO-220 package, making it easy to mount on heat sinks for thermal management. The "Z" in the designation indicates that the component is a qualified version of the IRF540, while "PBF" signifies it is lead-free, aligning with environmental standards.
Overall, the IRF540ZPBF is a reliable choice for engineers seeking efficient and robust solutions in electronic circuit designs.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, suitable for high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is up to 33A, allowing it to handle significant loads.
3. On-State Resistance: It boasts a low R_DS(on) of around 0.044 ohms at V_GS = 10V, leading to efficient power dissipation and reduced heat generation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling operation with lower gate drive voltages.
5. Fast Switching Speed: Optimized for fast switching, it is suitable for applications in power supplies, motor drivers, and switching circuits.
6. Package Type: Typically available in a TO-220 package, facilitating easy heat dissipation.
These features make the IRF540ZPBF a popular choice for various power management applications.
Package
Pinout
1. Gate (G): This pin controls the MOSFET. A voltage applied to the gate relative to the source allows it to turn on (conduct between drain and source).
2. Drain (D): This is the terminal through which the current enters the MOSFET when it is on. The drain is connected to the load.
3. Source (S): This terminal serves as the return path for the current and is connected to the ground or negative side of the circuit.
The IRF540ZPBF is widely used in power switching applications due to its high current handling capability and low on-resistance.
Manufacturer
Application
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Zahlungen
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