IRF6201TRPBF

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IRF6201TRPBF

MOSFET N-CH 20V 27A 8SO

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Spezifikationen

Series HEXFET®
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 27A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 2.45mOhm @ 27A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 195 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 8555 pF @ 16 V
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package 8-SOIC (0.154", 3.90mm Width)
Packaging Tape & Reel (TR)

Übersicht

Description

The IRF6201TRPBF is a N-channel MOSFET designed for high-speed switching applications. It features a low on-resistance (RDS(on)), which minimizes power loss and heat generation when conducting current. With a maximum drain-source voltage (VDS) of 60V and continuous drain current (ID) of 30A, it is suitable for various applications, including power management and motor control.
The MOSFET operates efficiently in low-voltage environments and can be driven directly from microcontrollers due to its low gate threshold voltage (VGS(th)). Its TO-220 package allows for effective heat dissipation, making it reliable for high-performance circuits. The device is also RoHS compliant, indicating it meets environmental standards for hazardous substances.
Overall, the IRF6201TRPBF is ideal for applications requiring efficient switching and high current handling, making it a popular choice in electronic design.

Features

The IRF6201TRPBF is a N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for various high-voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 18A, allowing it to handle significant power loads.
3. R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 0.1 ohms at V_GS = 10V, which minimizes conduction losses.
4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is in the range of 2 to 4V, enabling efficient operation in low-voltage applications.
5. Package: It is available in a TO-220 package, facilitating easy heat dissipation and installation.
6. Fast Switching Speed: Optimized for rapid switching, making it ideal for power supply circuits and motor controls.
These characteristics make the IRF6201TRPBF suitable for a wide range of electronics applications, from consumer devices to industrial machinery.

Package

The IRF6201TRPBF is packaged in a TO-220 form factor. This package type is designed for power applications, offering efficient thermal performance and ease of mounting.

Pinout

The IRF6201TRPBF is a N-channel MOSFET with a total of 6 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows or prevents current flow from drain to source.

2. Drain (D): This pin is where the main current flows out of the MOSFET. It connects to the load.
3. Source (S): This pin is the terminal through which current enters the MOSFET. It typically connects to ground in low-side switching applications.
4-6. Additional Pins: The remaining three pins are typically related to the substrate and may include connections for enhanced thermal performance or additional features depending on the specific packaging.
The IRF6201TRPBF is commonly used in power switching applications due to its low on-resistance and high-speed switching capabilities.

Manufacturer

The IRF6201TRPBF is manufactured by Infineon Technologies AG. Infineon is a semiconductor company that specializes in providing a wide range of semiconductor and system solutions, focusing on areas such as automotive, industrial power control, and security technologies. They are known for their expertise in power semiconductors, sensors, and microcontrollers, aiming to enhance energy efficiency and performance in various applications. Infineon operates globally and serves multiple sectors, including automotive, consumer electronics, and industrial automation.

Application

The IRF6201TRPBF is a N-channel MOSFET commonly used in applications such as power management, motor control, and DC-DC converters. It is suitable for switching applications in electronic circuits, including power supplies and amplifiers. The device is often employed in high-frequency and high-efficiency designs due to its low on-resistance and fast switching capabilities. Additionally, it can be utilized in industrial automation and automotive electronics.

Equivalent

The IRF6201TRPBF is a N-channel MOSFET. Equivalent products include the IRF620, IRF630, and STP16NF06. Always check the specific electrical characteristics and package types to ensure compatibility for your application.

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