IRF6218PBF

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IRF6218PBF

MOSFET P-CH 150V 27A TO220AB

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Spezifikationen

Supplier Infineon Technologies
Package Tube
Series HEXFET®
ProductStatus Obsolete
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 150 V
Current-ContinuousDrain(Id)@25°C 27A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 150mOhm @ 16A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 110 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 2210 pF @ 25 V
PowerDissipation(Max) 250W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Übersicht

Description

IRF6218PBF is a Pb-free (PBF) N-channel enhancement-mode power MOSFET from Infineon/International Rectifier. It’s used as a high-speed switching device in power electronics—think switch-mode power supplies, DC-DC converters, motor drives, and other power-management tasks. The “PBF” suffix indicates lead-free packaging.
Key takeaway:
- It’s a discrete power MOSFET (N-channel) intended for switching and amplification in power circuits.
- Available in standard Pb-free power packages (e.g., TO-220/TO-252/D²PAK variants), depending on the exact reel/kit.
- Design values you should verify in the datasheet: Vds (drain‑to‑source voltage), Id (continuous drain current), Rds(on) (on-resistance), gate charge (Qg, Qgs, Qgd), and packaging.
- Use it when Vds and current requirements exceed what small-signal MOSFETs can handle; ensure Vds > peak bus voltage, Id margin, and acceptable conduction losses.
For precise electrical ratings and thermal data, consult the latest IRF6218PBF datasheet.

Features

IRF6218PBF is a Pb-free N-channel enhancement-mode power MOSFET. Key features:
- Vds: 62 V; Id: 18 A (continuous)
- Rds(on): ~28 mΩ (typ) at Vgs = 10 V; max ~40 mΩ
- Gate threshold: ~1.0–2.5 V
- Gate drive: requires ~10 V for low Rds(on); not guaranteed at logic-level voltages
- Avalanche-rated for inductive-load protection
- Fast switching with moderate gate charge
- Pb-free RoHS-compliant (PBF)
- Suitable for high-efficiency switching applications (DC-DC converters, motor drivers, load switches)
Note: exact Rds(on) and parasitics vary with temperature and lot; refer to the datasheet for precise values.

Package

IRF6218PBF is an N‑channel power MOSFET supplied in a TO‑220AB (TO‑220) through‑hole package; the "PBF" suffix denotes a Pb‑free (lead‑free) finish.

Pinout

Pin count: 3 leads (G, D, S) with the drain usually connected to the package tab.
Function: IRF6218PBF is a power N-channel enhancement-mode MOSFET used as a high-current switching device in power electronics (switching regulators, motor drivers, etc.).

Manufacturer

Manufacturer: Infineon Technologies AG (the IRF prefix originates from International Rectifier, which Infineon acquired).
What kind of company: Infineon is a global semiconductor manufacturer specializing in power semiconductor devices (MOSFETs, IGBTs, power ICs), microcontrollers and sensors for automotive, industrial, and consumer electronics, with a strong focus on power management and energy-efficient solutions.

Application

IRF6218PBF is an N-channel HEXFET power MOSFET suited for high-speed switching with low on-resistance. Common applications:
- Switching regulators and DC-DC converters (buck/boost/buck-boost)
- Motor drives (BLDC, DC motors) and motor control stages
- Solar/renewable power inverters and front-ends
- Automotive and industrial power electronics (DC-DC, UPS)
- High-side/low-side switches and PWM lighting drivers
Concise, versatile device for PWM switching in power electronics.

Equivalent

IRF6218PBF is a high‑voltage N‑channel MOSFET (Pb‑free). Equivalents depend on Vds, Id, Rds(on), and package. Please provide: Vds rating, continuous Id, Rds(on), package (e.g., TO-220, D²PAK), and temp rating. With those, I’ll give exact cross‑references from Infineon, ST, Vishay, Onsemi, etc.

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