IRF630NPBF

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IRF630NPBF

MOSFET N-CH 200V 9.3A TO220AB

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Spezifikationen

Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V
Current-ContinuousDrain(Id)@25°C 9.3A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 300mOhm @ 5.4A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 35 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 575 pF @ 25 V
PowerDissipation(Max) 82W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Übersicht

Description

The IRF630NPBF is an N-channel power MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-speed switching applications. It features a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) rating of 9.2A at a temperature of 25°C. This device is ideal for use in power management, motor control, and other high-voltage applications due to its low on-resistance (R_DS(on)), which minimizes power loss during operation.
The IRF630NPBF is characterized by its ability to handle significant power and is often used in circuits that require efficient switching capabilities. It has a built-in gate-source protection and is available in a TO-220 package, making it suitable for both PCB mounting and heat dissipation. Additionally, the "NPBF" suffix indicates that it is lead-free and compliant with RoHS standards, making it environmentally friendly.
In summary, the IRF630NPBF is a versatile and efficient MOSFET suitable for various high-voltage applications, offering reliability and performance in power electronics.

Features

The IRF630NPBF is an N-channel power MOSFET designed for various applications including power switching and amplification. Key features include:
- Voltage Rating: Maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage applications.
- Current Rating: Continuous drain current (I_D) of 9.2A, allowing efficient current handling.
- On-Resistance: Low R_DS(on) of about 0.35Ω at V_GS = 10V, which minimizes power losses during operation.
- Gate Threshold Voltage: V_GS(th) typically ranges from 2V to 4V, enabling operation at lower gate drive voltages.
- Package: Available in a TO-220 package, facilitating easy heat dissipation and assembly.
- Switching Speed: Fast switching capabilities suitable for high-frequency applications.
These attributes make the IRF630NPBF ideal for use in power supplies, motor control, and other electronic circuits requiring reliable high-voltage switching.

Package

The IRF630NPBF is typically available in a TO-220 package type. This package features three leads and is designed for easy mounting on heat sinks, making it suitable for power applications.

Pinout

The IRF630NPBF is an N-channel MOSFET with a total of three pins. The pin count and their functions are as follows:
1. Gate (G) - Pin 1: This pin controls the MOSFET's operation. A voltage applied to the gate allows current to flow from the drain to the source.

2. Drain (D) - Pin 2: This is the terminal through which the main current flows when the MOSFET is on. It connects to the load.
3. Source (S) - Pin 3: This is the terminal that connects to the ground or negative supply in a circuit and serves as the return path for the drain current.
The IRF630NPBF is designed for high-speed switching applications and can handle significant voltage and current levels, making it suitable for various power management tasks.

Manufacturer

The IRF630NPBF is manufactured by Infineon Technologies, a leading global semiconductor company based in Germany. Infineon specializes in developing and providing a wide range of semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. The company focuses on areas such as power management, security, and sensor technology, and is recognized for its innovative contributions to the semiconductor industry. Infineon's products are widely used in both commercial and industrial applications, making it a key player in the electronics market.

Application

The IRF630NPBF is an N-channel MOSFET commonly used in various applications, including power supplies, motor control, and switching circuits. It is suitable for high-speed switching, amplifier stages, and inverters due to its low on-resistance and high voltage rating. Additionally, it can be employed in automotive applications and other electronic devices requiring efficient power management.

Equivalent

Equivalent products to the IRF630NPBF include the IRF540, IRF740, and IRF320. Other potential substitutes are the STP16NF06 and the FQP30N06L, depending on specific application requirements such as voltage, current ratings, and threshold voltage. Always check datasheets for compatibility.

Versand

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TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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