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IRF640NPBF
MOSFET N-CH 200V 18A TO220AB
- Hersteller
- Fr. Teil #IRF640NPBF
- Paket TO-220AB
- Datenblatt IRF640NPBF DataSheet
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Spezifikationen
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 18A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 150mOhm @ 11A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 67 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1160 pF @ 25 V |
| PowerDissipation(Max) | 150W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
Übersicht
Description
Key specifications include a low on-resistance (R_DS(on)) of around 0.18 ohms, which minimizes power loss during operation. The IRF640NPBF is also characterized by fast switching speeds, enabling efficient operation in pulse-width modulation (PWM) applications.
Additionally, it comes in a TO-220 package, which allows for effective heat dissipation, and is RoHS compliant, ensuring it meets environmental standards. The device's gate threshold voltage (V_GS(th)) typically ranges from 2-4V, making it compatible with standard logic levels for easier integration into various electronic circuits. Overall, the IRF640NPBF is a reliable choice for engineers seeking efficient and robust MOSFET solutions.
Features
- Voltage Rating: Drain-source voltage (V_DS) up to 200V, making it suitable for high-voltage applications.
- Current Rating: Continuous drain current (I_D) of 9.2A at 25°C, allowing it to handle significant loads.
- R_DS(on): Low on-resistance (typically 0.18Ω at V_GS = 10V), which minimizes power losses during operation.
- Gate Threshold Voltage: V_GS(th) between 2V to 4V, enabling efficient switching with low gate drive requirements.
- Fast Switching Speed: Quick turn-on and turn-off times, enhancing performance in high-frequency circuits.
- Package Type: Available in TO-220 and other packages for easy heat dissipation and mounting.
These features make the IRF640NPBF ideal for applications in power supplies, motor control, and other electronic circuits requiring efficient and reliable switching.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A positive voltage applied here relative to the source pin turns the device on, allowing current to flow between the drain and source.
2. Drain (D): This pin connects to the load. When the MOSFET is turned on, current flows from the drain to the source.
3. Source (S): This pin is connected to ground (or the negative side of the power supply). It serves as the return path for the current flowing from the drain when the MOSFET is conducting.
The IRF640NPBF is designed for high-speed switching applications and can handle high voltages and currents, typically used in power management and motor control circuits.
Manufacturer
Application
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Zahlungen
Payment Methods
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