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IRF640PBF
MOSFET N-CH 200V 18A TO220AB
- Hersteller
- Fr. Teil #IRF640PBF
- Paket TO-220-3
- Datenblatt IRF640PBF DataSheet
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Spezifikationen
| Package | Bulk |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 18A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 180mOhm @ 11A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 70 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1300 pF @ 25 V |
| PowerDissipation(Max) | 125W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
Übersicht
Description
The IRF640PBF is packaged in a TO-220 format, allowing for effective heat dissipation and easier mounting on heat sinks. It operates efficiently at high speeds, making it ideal for high-frequency applications. Additionally, the device is environmentally friendly as it is lead-free and complies with RoHS standards.
Overall, the IRF640PBF is a reliable choice for designers seeking robust performance in their power electronic circuits.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 200V, allowing it to handle high-voltage applications.
2. Current Rating: It supports a continuous drain current (I_D) of 9.2A at 25°C, suitable for medium to high-power applications.
3. On-Resistance: The R_DS(on) is low at approximately 0.18 ohms, reducing power loss during operation.
4. Gate Threshold Voltage: Gate threshold voltage (V_GS(th)) ranges from 2V to 4V, permitting easy driving with standard logic levels.
5. Package Type: Typically available in TO-220 and other packages, allowing for efficient heat dissipation.
6. Fast Switching Speed: Designed for high-speed switching, making it ideal for applications like power supplies and motor drivers.
7. Thermal Performance: It features a high maximum junction temperature of 150°C, enhancing reliability in challenging environments.
These characteristics make the IRF640PBF suitable for various applications in power electronics and automotive systems.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin turns the device on or off.
2. Drain (D): The drain pin is where the current flows out of the MOSFET. It connects to the load in a circuit.
3. Source (S): The source pin is where the current enters the MOSFET. It is typically connected to ground or a negative voltage in an N-channel configuration.
The IRF640PBF is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 9.2A. Its low on-resistance (R_DS(on)) makes it suitable for power switching applications.
Manufacturer
Application
Equivalent
Versand
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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
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2. Kredit- / Debitkarte
3. Überweisung
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