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IRF6644TRPBF
MOSFET N-CH 100V 10.3A DIRECTFET
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- Fr. Teil #IRF6644TRPBF
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- Datenblatt IRF6644TRPBF DataSheet
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Spezifikationen
| Supplier | Infineon Technologies |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 10.3A (Ta), 60A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 13mOhm @ 10.3A, 10V |
| Vgs(th)(Max)@Id | 4.8V @ 150µA |
| GateCharge(Qg)(Max)@Vgs | 47 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 2210 pF @ 25 V |
| PowerDissipation(Max) | 2.8W (Ta), 89W (Tc) |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DIRECTFET™ MN |
Übersicht
Description
With a gate threshold voltage of 2-4V, it can be driven by low-voltage logic levels, enhancing its versatility in various circuits. The TO-220 package allows for effective heat dissipation, making it suitable for high-power applications.
Additionally, the IRF6644TRPBF is part of the RoHS-compliant family of products, ensuring it meets environmental standards. Its reliability and efficiency make it a popular choice among engineers for their designs in both consumer and industrial electronics.
Features
- V_DS Rating: 40V, suitable for low-voltage applications.
- I_D Rating: 45A continuous drain current, allowing for robust power handling.
- R_DS(on): Low on-resistance of approximately 8.5 mΩ at V_GS = 10V, enhancing efficiency by reducing power loss.
- Gate Threshold Voltage (V_GS(th)): Typically ranges from 1V to 2.5V, enabling operation at lower gate voltages.
- Fast Switching: Designed for high-speed switching applications, making it ideal for power management and DC-DC converters.
- Package: Available in a TO-220 package, ensuring effective heat dissipation.
These features make the IRF6644TRPBF suitable for applications in power supplies, motor drives, and other electronic circuits requiring efficient power switching.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is the output terminal where the current flows out when the MOSFET is turned on.
3. Source (S): This pin is the input terminal where the current enters the MOSFET when it is on.
4. Tab/Heat Sink: Often connected to the source for thermal management, helping to dissipate heat generated during operation.
The IRF6644TRPBF is designed for high-efficiency switching applications, featuring low on-resistance and high-speed performance. It operates at a maximum drain-source voltage of 40V and can handle continuous drain currents of up to 71A.
Manufacturer
Application
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Versand
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Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
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