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IRF6775MTRPBF
MOSFET N-CH 150V 4.9A DIRECTFET
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- Fr. Teil #IRF6775MTRPBF
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- Datenblatt IRF6775MTRPBF DataSheet
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Spezifikationen
| Supplier | Infineon Technologies |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 150 V |
| Current-ContinuousDrain(Id)@25°C | 4.9A (Ta), 28A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 56mOhm @ 5.6A, 10V |
| Vgs(th)(Max)@Id | 5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 36 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1411 pF @ 25 V |
| PowerDissipation(Max) | 2.8W (Ta), 89W (Tc) |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DIRECTFET™ MZ |
Übersicht
Description
The device is housed in a compact, surface-mount package (SO-8), which facilitates efficient thermal management and reduces PCB space. Its fast switching capabilities also enhance performance in high-frequency applications. The IRF6775MTRPBF is RoHS-compliant, ensuring it meets environmental regulations.
Overall, this MOSFET is an excellent choice for engineers seeking a reliable and efficient solution for power electronics in various applications.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 75V, making it suitable for various power circuits.
2. Current Rating: The continuous drain current (I_D) is rated at 40A, providing robust performance in demanding applications.
3. R_DS(on): It offers a low on-resistance of approximately 0.022 ohms, minimizing conduction losses and enhancing efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2 to 4V, allowing for easy drive circuitry integration.
5. Package Type: Available in a TO-220 package, facilitating effective heat dissipation.
6. Fast Switching: Suitable for high-frequency applications due to its rapid switching capabilities.
These features make the IRF6775MTRPBF ideal for use in power supplies, motor drives, and other high-performance applications requiring efficient and reliable semiconductor performance.
Package
Pinout
1. Gate (G): This is the control terminal where the voltage is applied to turn the MOSFET on or off.
2. Drain (D): This terminal connects to the load and is where the current flows out of the MOSFET when it is turned on.
3. Source (S): This terminal is connected to the ground or negative side of the circuit and serves as the return path for the current.
4. DRAIN (D): The second drain pin is present for better thermal dissipation and is typically connected to the same drain node.
5. Source (S): The second source pin is similarly available for improved thermal management, usually tied to the same source node.
The IRF6775MTRPBF is designed for high-speed switching applications and can handle high currents and voltages, making it suitable for power management in various electronic devices.
Manufacturer
Application
Equivalent
Versand
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Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
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3. Überweisung
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