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IRF6894MTRPBF
MOSFET N-CH 25V 32A DIRECTFET
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- Datenblatt IRF6894MTRPBF DataSheet
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Spezifikationen
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25 V |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 160A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.3mOhm @ 33A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 4.5 V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 4160 pF @ 13 V |
| FET Feature | Schottky Diode (Body) |
| Power Dissipation (Max) | 2.1W (Ta), 54W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DIRECTFET™ MX |
| Package / Case | DirectFET™ Isometric MX |
Übersicht
Description
Key specifications include a maximum drain-source voltage (VDS) of 30V, a continuous drain current (ID) of 60A, and a gate threshold voltage (VGS(th)) typically ranging from 1V to 2V. The device is housed in a TO-220 package, allowing for effective thermal dissipation.
The IRF6894MTRPBF is also RoHS compliant, ensuring it meets environmental standards. Its combination of high performance, reliability, and efficiency makes it a popular choice among engineers for various electronic applications.
Features
- Voltage Rating: 30V maximum drain-to-source voltage (V_DSS), suitable for low-voltage applications.
- Continuous Drain Current: Up to 55A, allowing it to handle substantial loads.
- Low On-Resistance: R_DS(on) typically around 10 mΩ at V_GS = 10V, ensuring efficient operation and minimal power loss.
- Fast Switching: Capable of high-speed switching, making it ideal for applications like power supplies and motor control.
- Temperature Range: Operates in a wide temperature range, enhancing reliability in various environments.
- Package: Available in a compact TO-220 package, facilitating easy heatsinking and PCB layout.
Overall, the IRF6894MTRPBF is well-suited for applications requiring high efficiency and robust thermal performance.
Package
Pinout
The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): The main current-carrying terminal.
3. Source (S): The terminal connected to the ground or lower potential.
4. D1, D2: Secondary drain connections for enhanced current capability.
5. G1, G2: Additional gate connections for parallel operation or control.
This device features low on-resistance, high-speed switching, and is suitable for applications like power management, motor control, and other switching applications in power electronics.
For specific electrical characteristics and ratings, refer to the datasheet provided by the manufacturer.
Manufacturer
Application
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Zahlungen
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