IRF7103TR

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IRF7103TR

MOSFET 2N-CH 50V 3A 8SOP

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Spezifikationen

Part Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel
Drain to Source Voltage (Vdss) 50V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Vgs(th) (Max) @ Id 3V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 25V
Power - Max 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOP
Rds On (Max) @ Id, Vgs 30mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V

Übersicht

Description

The IRF7103TR is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It features a N-channel configuration, allowing it to conduct current when a positive voltage is applied to the gate relative to the source. This device is well-suited for applications in power management, DC-DC converters, and motor control due to its low on-resistance (R_DS(on)), which minimizes power loss during operation.
Key specifications include a maximum drain-source voltage (V_DSS) of 30V, a continuous drain current (I_D) rating of 42A, and a fast switching speed, which enhances efficiency in electronic applications. The IRF7103TR is housed in a TO-220 package, facilitating heat dissipation and easy mounting. Its robustness and efficiency make it a popular choice among engineers for various electronic and power applications.

Features

The IRF7103TR is a N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Capable of handling continuous drain current (I_D) up to 55A.
3. On-Resistance: Low R_DS(on) value, typically around 9 mΩ at V_GS = 10V, which minimizes conduction losses.
4. Gate Threshold Voltage: V_GS(th) ranges from 1V to 3V, facilitating efficient drive control.
5. Package Type: Available in a TO-220 package, suitable for heat dissipation.
6. Fast Switching: Designed for rapid switching speeds, making it ideal for applications like power supplies, motor control, and high-frequency converters.
7. Thermal Resistance: Features a low thermal resistance, aiding in better heat management.
These attributes make the IRF7103TR suitable for various power management and control applications in consumer electronics and industrial devices.

Package

The IRF7103TR is typically packaged in a TO-220 form factor, which is a popular package type for power MOSFETs, offering good thermal performance and ease of mounting.

Pinout

The IRF7103TR is a dual N-channel MOSFET. It comes in a 8-pin package, typically a SOIC-8 or similar configuration. The pin functions are as follows:
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Drain 1 (D1): The drain terminal of the first N-channel MOSFET.
3. Source 1 (S1): The source terminal of the first N-channel MOSFET.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Drain 2 (D2): The drain terminal of the second N-channel MOSFET.
6. Source 2 (S2): The source terminal of the second N-channel MOSFET.
7. Common Source (CS): Common source connection for both MOSFETs.
8. NC (Not Connected): Pin typically left unconnected.
This device is often used in power management and switching applications due to its efficiency and reliability.

Manufacturer

The IRF7103TR is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in providing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensor technologies. The company serves various industries such as automotive, industrial, communications, and consumer electronics, focusing on enhancing energy efficiency and performance in electronic systems. Infineon is known for its commitment to innovation and sustainability, playing a significant role in the development of technologies that support the transition to renewable energy and smart mobility.

Application

The IRF7103TR is a N-channel MOSFET primarily used in power management applications, including DC-DC converters, switching power supplies, and motor control circuits. Its high-speed switching capabilities and low on-resistance make it suitable for efficient power switching in consumer electronics, automotive systems, and renewable energy systems like solar inverters. Additionally, it can be employed in low-voltage applications for load switching and signal amplification.

Equivalent

The IRF7103TR is a dual N-channel MOSFET. Equivalent products include the AO3400, BSS138, and NXP BSS84. Ensure to check the datasheets for specific parameters like voltage, current ratings, and package types to ensure compatibility.

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