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IRF7201TRPBF
MOSFET N-CH 30V 7.3A 8SO
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- Fr. Teil #IRF7201TRPBF
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- Datenblatt IRF7201TRPBF DataSheet
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Spezifikationen
| Series | HEXFET® |
| Part Status | Obsolete |
| Base Product Number | IRF7201 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 7.3A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package | 8-SOIC (0.154", 3.90mm Width) |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Übersicht
Description
Key specifications include a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 20A. Its low gate threshold voltage allows it to be driven with standard logic levels, enhancing compatibility with microcontrollers and other digital logic devices.
The IRF7201TRPBF is often used in power supplies, motor drivers, and other applications requiring efficient power switching. Its R_DS(on) value ensures minimal energy loss during operation, making it a reliable choice for engineers looking to improve energy efficiency in their designs. The "TRPBF" suffix indicates that it is lead-free and compliant with RoHS standards, promoting environmentally friendly practices in electronics manufacturing.
Features
1. Voltage Rating: It has a maximum drain-to-source voltage (V_DS) of 100V, allowing it to handle substantial voltage levels.
2. Current Rating: The device can support continuous drain currents (I_D) up to 50A, making it suitable for high current applications.
3. Low R_DS(on): With a low on-resistance (R_DS(on)) of approximately 0.025 ohms at V_GS = 10V, it minimizes power loss and enhances thermal performance.
4. Fast Switching Speed: Its design facilitates fast switching capabilities, improving efficiency in applications.
5. Thermal Management: Built with a TO-220 package, it allows for effective heat dissipation.
6. Applications: Commonly used in power supplies, motor drives, and other switching applications.
Overall, the IRF7201TRPBF is ideal for energy-efficient designs requiring robust performance in high-voltage and high-current scenarios.
Package
Pinout
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal connected to the ground or negative side of the supply.
The remaining pins, depending on the package, may include:
4. Tab/Heat Sink - Provides thermal dissipation.
5. Body Diode - Internal to the MOSFET, allows current flow in the reverse direction when the device is off.
This device is characterized by its low on-resistance and high-speed performance, making it suitable for applications in power management, motor control, and power supplies.
Manufacturer
Application
Equivalent
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Zahlungen
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