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IRF7303TRPBF
MOSFET 2N-CH 30V 4.9A 8-SOIC
- Hersteller
- Fr. Teil #IRF7303TRPBF
- Paket SO8
- Datenblatt IRF7303TRPBF DataSheet
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Standard |
| DraintoSourceVoltage(Vdss) | 30V |
| Current-ContinuousDrain(Id)@25°C | 4.9A |
| RdsOn(Max)@IdVgs | 50mOhm @ 2.4A, 10V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 25nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 520pF @ 25V |
| Power-Max | 2W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Übersicht
Description
This MOSFET is housed in a TO-220 plastic package, allowing for efficient heat dissipation. It is ideal for applications such as power supplies, motor drivers, and consumer electronics. The IRF7303TRPBF is also RoHS compliant, indicating that it is free from hazardous substances.
Key parameters include a maximum gate-source voltage (VGS) of ±20V and a total gate charge (Qg) of about 17nC at a gate-source voltage of 10V. Its fast switching capabilities and robust performance make it a popular choice for designers looking for reliable components in their electronic circuits.
Features
1. Max Drain-Source Voltage (Vds): 30V, suitable for low-voltage applications.
2. Continuous Drain Current (Id): Up to 62A, allowing for high current handling.
3. RDS(on): Low on-resistance (typically around 10 mΩ), which minimizes power loss during operation.
4. Gate Threshold Voltage (Vgs(th)): Ranges between 2V to 4V, enabling efficient gate drive requirements.
5. Package: Available in a TO-220 package, facilitating easy heat dissipation.
6. Fast Switching Speed: Ideal for applications requiring quick turn-on and turn-off, such as in power management and motor control.
7. Applications: Commonly used in power supplies, DC-DC converters, and automotive systems.
These features make the IRF7303TRPBF suitable for a variety of electronic applications where efficiency and thermal performance are critical.
Package
Pinout
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied here allows current to flow from drain to source.
2. Drain (D) - This pin connects to the load. Current flows out of this pin when the MOSFET is turned on.
3. Source (S) - This pin connects to ground or the lower potential side of the circuit. Current flows into this pin when the MOSFET is on.
4. Gate (G) (Duplicate) - The second gate pin is used for redundancy, allowing for improved thermal management and performance under certain conditions.
5. Drain (D) (Duplicate) - The second drain pin provides better current handling and thermal performance.
6. Source (S) (Duplicate) - The second source pin enhances the current capability and reduces resistive losses.
The IRF7303TRPBF is commonly used in power management and switching applications.
Manufacturer
Application
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Zahlungen
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